Allicdata Part #: | PDTD113EUX-ND |
Manufacturer Part#: |
PDTD113EUX |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 0.425W |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTD113EUX Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04234 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 1 kOhms |
Resistor - Emitter Base (R2): | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 225MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
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The PDTD113EUX is just one of many bipolar junction transistors (BJT) on the market. It is a single type, pre-biased transistor that is designed for a wide range of applications in industry, home appliances, and consumer products. The PDTD113EUX has a wide operating voltage range, high density surface mount packages, low noise and fast switching speed, making it suitable for many applications where low power is a critical factor. In this article, we will discuss the application field and working principle of the PDTD113EUX.
Application Field
The PDTD113EUX belongs to the broad class of single, pre-biased BJTs. It is commonly used in low-voltage, low-power applications. The PDTD113EUX is well suited for regulator circuits, audio amplifiers, motor control circuits and switching supplies. It is also a popular choice for low cost battery powered applications, due to its wide operating voltage range and low power consumption. In addition, its high density surface mount packages make it extremely suitable for space-limited applications. Its high noise immunity also makes it ideal for automotive, telecom, instrumentation and digital processing applications.
Working Principle
The PDTD113EUX is a bipolar transistor, which means that it is composed of two P-type and one N-type semiconductor layer. A small electric current flows from the Emitter to the Collector when a voltage is applied to the Base of the transistor. This small current is amplified by the transistor, allowing larger currents to be switched on and off. The PDTD113EUX is a pre-biased transistor, which means that a small amount of current is being fed to the base of the transistor even when no voltage is applied. This allows for faster switching and lower power consumption.
The gain of the PDTD113EUX is typically around 50-60 at 4.5V and a maximum supply voltage of 30V. The Maximum Collector Current (Ic) is 30mA and the Maximum Collector-Emitter Voltage (Vce) is 30V. The Input capacitance is typically around 1.5pF.
Conclusion
In conclusion, the PDTD113EUX is a single, pre-biased transistor that is suitable for a wide range of low voltage, low power applications. Its wide operating voltage range and fast switching speed make it an attractive choice for many situations where power consumption is a major consideration. The high noise immunity also make it well suited for more sensitive applications such as automotive and telecom.
The specific data is subject to PDF, and the above content is for reference
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