| Allicdata Part #: | PDTD143XUF-ND |
| Manufacturer Part#: |
PDTD143XUF |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | TRANS PREBIAS NPN 0.425W |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: |  PDTD143XUF Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.03387 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 4.7 kOhms |
| Resistor - Emitter Base (R2): | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 100mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | 225MHz |
| Power - Max: | 300mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SOT-323-3 |
Description
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The PDTD143XUF is a pre-biased single bipolar junction transistor or BJT that is designed for use in applications requiring precise current amplification, such as low-voltage amplifiers and comparators. It is also ideal for situations where level translation and signal conditioning for critical signals is required.The PDTD143XUF has a base-emitter voltage of 3V, a maximum collector-emitter voltage of 100V, and a steady-state collector current of up to 0.5A. It is rated at 100mA of power dissipation, with a maximum junction temperature of 150 degrees Celsius.The pre-biased standard configuration of the PDTD143XUF is recommended for use when precise timing, in conjunction with current amplification, is required. It also has low saturation voltage and can be used as a level shifter. Its low-to-high off-state blocking capabilities make it ideal for use in logic circuits.The working principle of the PDTD143XUF is based on the principle of negative feedback. The current gain of the transistor, called hFE, is controlled by the base-emitter voltage. When the base-emitter voltage exceeds a certain threshold, the transistor is said to be ‘saturated’, and can no longer increase its current gain. Thus, the pre-bias prevents the transistor from saturating at higher base-emitter voltages. This can be beneficial when precise current gain control is required, as the pre-biased performance of the transistor can be adjusted to a specific bias point.The transistor’s rated 100mA power dissipation also allows for higher power output and improved noise performance. This is especially useful for situations where high-power amplification is needed. The low saturation voltage and high off-state blocking capabilities also make the PDTD143XUF suitable for applications in the areas of logic circuits and other high-speed digital circuits.In conclusion, the PDTD143XUF is a pre-biased single bipolar junction transistor designed for use in applications requiring precise current amplification and low-voltage operation. It is particularly suitable for situations where level translation and signal conditioning for critical signals is required, and where higher noise performance and power output is needed. Its pre-biased standard configuration makes it ideal for use when precise timing and current amplification is required.
The specific data is subject to PDF, and the above content is for reference
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