PDTD123TT,215 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2668-1-ND |
Manufacturer Part#: |
PDTD123TT,215 |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 250MW TO236AB |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTD123TT,215 Datasheet/PDF |
Quantity: | 1790 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 0.24570 |
10 +: | $ 0.20097 |
100 +: | $ 0.10641 |
500 +: | $ 0.07001 |
1000 +: | $ 0.04760 |
Specifications
Series: | -- |
Packaging: | Cut Tape (CT) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Description
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,Introduction to PDTD123TT,215 Transistor
The PDTD123TT, 215 transistor, also known as a single, pre-biased bipolar junction transistors (BJT), is a type of transistor that finds its primary applications in small signal amplifiers in consumer electronics. This small but powerful device is very energy-efficient, making it an ideal choice for various amplifier designs.Circuit Working of PDTD123TT,215 Transistor
Basically, a PDTD123TT,215 Transistor is made up of three pins: the base, the collector, and the emitter. The Base is the control terminal of the transistor and the two other terminals are commonly known as the Collector and Emitter. By using a DC voltage or current, the base current is controlled by the voltage of the base terminal to allow current to flow through the Collector and Emitter (C-E) pins of the transistor. There are three possible conditions of current flow when a PDTD123TT,215 Transistor is in operation: cut-off, active and saturation. In the Cut-off region, no current will flow through the C-E pins. When the Base current is increased, the transistor enters the Active region, and current flows through the C-E pins. Finally, if the Base current is increased further, the transistor enters saturation, where the Collector current is maximized. The current gain of a PDTD123TT,215 transistor is known as its hFE and this value determines how much current will flow through the collector when a certain voltage is applied to the Base.Applications of PDTD123TT,215 Transistor
The PDTD123TT,215 Transistor is mainly used in consumer electronics for small signal amplification. Its major application areas include car audio systems, home theater systems, and other consumer electronics. The transistors’ efficiency and power performance make it a great choice for amplifiers and switching circuits. Furthermore, the PDTD123TT,215 Transistor’s small package size makes it ideal for use in handheld electronics and mobile phones.The small size, high power efficiency, and low cost of the PDTD123TT, 215 Transistor have rendered it a popular selection among hobbyists and engineers alike. It is used in various amplifier stages, as well as in circuits of TVs, DVD players, portable media devices, and more.Conclusion
The PDTD123TT,215 Transistor is a powerful, energy-efficient device that finds its primary applications in consumer electronics and other small signal amplification needs. Its three-pin structure is essential for its functioning, and its base current is responsible for modulating the collector current. The transistor’s small package size and low cost make it an ideal choice for various consumer electronics applications.The specific data is subject to PDF, and the above content is for reference
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