PDTD113ZUF Allicdata Electronics
Allicdata Part #:

PDTD113ZUF-ND

Manufacturer Part#:

PDTD113ZUF

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 0.425W
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTD113ZUF datasheetPDTD113ZUF Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03387
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 225MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Description

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Transistors are essential components in modern electronics. A type of transistor called Pre-Biased Bipolar Junction Transistors (BJT) is particularly useful for many different electronic applications. The PDTD113ZUF is an example of this type of transistor and is widely used in a variety of applications. In this article, the application field and working principle of the PDTD113ZUF will be discussed in greater detail.

The PDTD113ZUF is a single pre-biased BJT and is particularly suited for use in differential amplifiers. A differential amplifier is an electronic circuit designed to amplify the difference between two input signals while rejecting any signals that are common to both inputs. Because of this, the PDTD113ZUF transistor is often used in various types of receivers such as radio receivers, television receivers and even infrared receivers. It is also commonly used in various types of filters such as active band-pass filters, high pass filters and low pass filters. As such, the PDTD113ZUF can be used in a wide variety of electronic applications.

Now let\'s look at the working principle of the PDTD113ZUF transistor. This type of transistor is made using two different layers of silicon. The first layer is called the base region and it contains an N type doping. The second layer is called the collector region and it contains a P type doping. The collector region is divided into two regions by a thin P-N junction. This junction serves as a diode and is responsible for the transistor\'s two different modes of operation: forward biased mode and reverse biased mode.

When the PDTD113ZUF is connected in the forward biased mode, electrons from the N type doping in the base region will be attracted to the P type doping in the collector region and holes from the P type doping will be attracted to the N type doping. This allows for current to flow through the transistor. However, if the PDTD113ZUF is connected in the reverse biased mode, the diode will become reverse biased. As a result, the electrons and holes become repelled from one another and no current is allowed to flow through the transistor.

The PDTD113ZUF is a popular choice for a wide variety of applications due to its versatile design. Its pre-biased structure allows the transistor to be easily used in the forward and reverse biased modes, making it a great choice for various filtering and amplifier applications. The fact that the PDTD113ZUF is a single BJT also makes it easy to use, as only one device is required to complete a circuit. This makes it ideal for use in smaller, low power circuit designs.

In conclusion, the PDTD113ZUF is a versatile and popular pre-biased single BJT transistor that is widely used in various types of receivers, filters and amplifiers. Its pre-biased design makes it possible to use the transistor in both the forward and reverse biased modes, allowing for more design flexibility. Its single BJT design also makes it a great choice for small, low power circuit designs. As a result, the PDTD113ZUF transistor is an excellent choice for a variety of electronic applications.

The specific data is subject to PDF, and the above content is for reference

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