Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	225MHz
Power - Max:	300mW
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323-3

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PDTD114EUX Application Field and Working Principle

Introduction

The PDTD114EUX is a pre-biased single bipolar transistor (BJT) specifically designed for high voltage and low noise applications. It consists of integrated high voltage resistors, a low-noise polyphase attenuator, a temperature stable temperature compensation resistor, and a high-bandwidth auxilliary resistor. This combination provides excellent linearity, stability, and power efficiency, allowing for higher performance in a variety of high voltage and low noise applications.

Applications

The PDTD114EUX can be used in a variety of applications, including amplifiers, power supplies, switching applications, and audio applications. In power amplifier designs, the PDTD114EUX can provide a great deal of gain with low noise, while providing excellent control and linearity. The device\'s low-noise characteristics and high power efficiency make it ideal for audio applications, where both low noise and low power consumption are desired. The low-noise-per-volt capabilities of the PDTD114EUX make it a great choice for switching applications, where fast switching times and low crosstalk are required. Finally, the device\'s high voltage and temperature stability can be beneficial for low-voltage power supplies, as it can provide reliable performance even when operating under extreme conditions.

Working Principle

The PDTD114EUX is a pre-biased single bipolar transistor (BJT), meaning that it has two elements: the base and the collector. The input signal is applied to the base, while the output is taken from the collector. The internal construction of the device consists of a base resistor, a base emitter junction, and a collector emitter junction. When a signal is applied to the transistor, a current is drawn from the base terminal, which causes the base-to-emitter junction to become forward biased. This forward bias causes a current to flow from the base to the collector and from the collector to the emitter, creating a feedback loop that amplifies the base signal and produces a much larger output. By controlling the amount of current applied to the base, the output voltage can be precisely controlled.

Conclusion

The PDTD114EUX is a pre-biased single bipolar transistor (BJT) designed for high voltage and low noise applications. It offers excellent performance in a variety of applications, including amplifiers, power supplies, switching applications, and audio applications. The device is easy to use and offers excellent power efficiency and linearity. By controlling the amount of current applied to the base, it is possible to precisely control the output voltage of the device. With its high voltage and low noise capabilities, the PDTD114EUX is an excellent choice for a variety of high voltage and low noise applications.

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