PDTD113EUF Allicdata Electronics
Allicdata Part #:

PDTD113EUF-ND

Manufacturer Part#:

PDTD113EUF

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 0.425W
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTD113EUF datasheetPDTD113EUF Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03387
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 225MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Description

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The PDTD113EUF is a pre-biased single transistor for general purpose applications. It is a small package transistor in an industry focusing more and more on miniaturizing electrical components.

A transistor is a semiconductor device designed to amplify and switch the electrical signals moving through it. Transistors are used in everyday electronics applications including logic gates and drivers, amplifiers, and some computer processors. The PDTD113EUF belongs to the bipolar junction transistor (BJT) family. The term pre-biased means that it offers a bias potential from the input of the device. This can increase device performance as well as simplify connections.

The PDTD113EUF comes in a SOT363 package with a thickness of 0.8mm. It is a PNP transistor with a collector-emitter breakdown voltage of 45V and a base-emitter rating of 40mA. The device has a gain hFE of 270 to 400, dependent on its collector current. This device requires a minimum of 150mA to reach the 100uV of noise across the package.

The primary application of the PDTD113EUF is in low power designs that make use of weak signals, such as audio amplifiers, signal switches and converters, automotive applications, and line drivers. The transistor can be applied in both linear and switch mode applications.

When used as a signal amplifier, the transistor amplifies weak signals. This is possible because the gain of a transistor is stable and relatively consistent across temperature and supply voltage. As the signal strength increases, the voltage increases and the transistor starts to switch, thus ensuring a clean output signal.

When using the PDTD113EUF as a switch, it works to switch the signal on and off. This is accomplished when the voltage is greater than a certain threshold, typically 0.7V. When the voltage drops below this value, the transistor is off and there is no current flow. This makes the transistor a perfect device for switching sensitive or low current signals from one point to another.

The PDTD113EUF can also be used in a “push-pull” configuration, which is when two transistors are included in the circuit in opposite directions. This configuration is used in many devices, such as digital regulators, to provide equal and opposite voltages and currents by pushing and pulling the current flow in different directions.

The PDTD113EUF is a versatile transistor with a wide range of applications. With its low power ratings and pre-biased features, it is the perfect transistor for powering small, low power, and signal-based electronic systems.

The specific data is subject to PDF, and the above content is for reference

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