PDTD123ET,215 Allicdata Electronics

PDTD123ET,215 Discrete Semiconductor Products

Allicdata Part #:

1727-5141-2-ND

Manufacturer Part#:

PDTD123ET,215

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 250MW TO236AB
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTD123ET,215 datasheetPDTD123ET,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03575
6000 +: $ 0.03109
15000 +: $ 0.02643
30000 +: $ 0.02487
75000 +: $ 0.02332
150000 +: $ 0.02073
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: PDTD123
Description

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PDTD123ET,215 Application Field and Working Principle

Transistors are electronic components that act as switches and amplifiers. They are the building blocks of most modern circuits. Bipolar junction transistors (BJT) are transistors with two active junctions that allow current flow in both directions. They are used as switches, amplifiers, and regulators. The Single, Pre-Biased PDTD123ET,215 is an excellent example of a BJT that is used in many applications. This article will discuss the application fields and working principles of the PDTD123ET,215.

Application Field of the PDTD123ET,215

The PDTD123ET,215 is a bipolar junction transistor (BJT) which has two active junctions and is biased with a current or voltage to start conducting current. It is used in a wide variety of applications such as motor control, audio amplification, low and medium voltage switching, and RF amplification. In motor control applications, the PDTD123ET,215 can be used to precisely control the voltage applied to a motor, allowing for efficient operation and improved performance. In audio amplification, the PDTD123ET,215 can act as an efficient amplifier to provide increased volume. Finally, in low and medium voltage switching and RF amplification, the PDTD123ET,215 allows for signal processing and conversion.

Working Principle of the PDTD123ET,215

The working principle of the PDTD123ET,215 involves the concept of current gain. Current gain is the ratio of current that travels through the collector to the current that travels through the emitter. Current gain is expressed as a ratio and can be represented by the equation β = Ic/Ie. By manipulating the amount of current that flows through the collector, the PDTD123ET,215 can be used to amplify and switch signals.

The PDTD123ET,215 is a pre-biased transistor, which means that it is ready to start conducting current as soon as it is powered on. When the device receives power, the base current flows through the transistor and causes a voltage increase in the collector, which is then passed to the emitter. This voltage increase causes the collector current to rise, thus increasing the current gain. The increased current gain allows for the device to be used to switch, amplify, and regulate signals.

Conclusion

The PDTD123ET,215 is a pre-biased, single bipolar junction transistor that is used in a wide variety of applications including motor control, audio amplification, low and medium voltage switching, and RF amplification. The working principle of the PDTD123ET,215 involves the concept of current gain. By manipulating the amount of current that travels through the collector, the PDTD123ET,215 can be used to switch, amplify, and regulate signals efficiently and effectively.

The specific data is subject to PDF, and the above content is for reference

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