PDTD123YT,215

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	PDTD123

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IntroductionThe PDTD123YT,215 transistor is a single pre-biased bipolar junction transistor (BJT) that is capable of providing superior performance in a broad range of applications. This article will discuss the applications and working principles of this device. ApplicationsThe PDTD123YT,215 is mainly used in power converters, switching regulators, and switching power supplies. It is a well-suited choice for applications where the requirements are reliable drive performance, high efficiency and low on-resistance. Due to its pre-bias configuration, it is also well-suited for applications that require minimal startup current, such as solar modules, computer and printer power supplies, and digital cell phone chargers. Because of its robustness, it is well suited for harsh-environment industrial applications as well. Working PrincipleThePDTD123YT,215 is a single, NPN pre-bias active BJT. When used in a driver configuration, the device is pre-biased with a small current in order to reduce the effective switching time and current. This improves the switching time and reduces the power dissipation. The BJT is driven in a Class B configuration. As the input Voltage increases, the input current increases and a larger current flows through the base and emitter terminals of the device, which generates a larger collector current. As the collector current increases, the collector-emitter voltage across the device decreases, resulting in a more efficient switching power supply.ConclusionIn conclusion, the PDTD123YT,215 is a single, pre-biased bipolar junction transistor (BJT) that is capable of providing superior performance in a broad range of applications. It is mainly used in power converters, switching regulators, and switching power supplies, but can also be used in harsh-environment industrial applications as well. Its Class B configuration, pre-bias capability, and robust performance make it a suitable choice for applications that require reliable drive performance, high efficiency and low on-resistance.

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