| Allicdata Part #: | 1727-7662-2-ND |
| Manufacturer Part#: |
PMPB25ENEX |
| Price: | $ 0.12 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | PMPB25ENE/SOT1220/SOT1220 |
| More Detail: | Surface Mount DFN2020MD-6 |
| DataSheet: |  PMPB25ENEX Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 0.10893 |
Specifications
| Series: | * |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | DFN2020MD-6 |
| Package / Case: | 6-UDFN Exposed Pad |
Description
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The PMPB25ENEX is a field-effect transistor (FET) suitable for use in high-temperature electronic applications. This N-channel power MOSFET operates over a wide temperature range and has a maximum drain-source voltage rating of 25 volts. The drain-to-source resistance (RDS(ON)) is typically 0.0015 ohms, making it an ideal choice for use in high-voltage switching applications. The power MOSFET is also highly resistant to damage from electrostatic discharge and is capable of handling pulsed load current of up to 40A. This product is part of a growing family of FETs from several vendors that have been designed for use in high-temperature applications. The PMPB25ENEX is a versatile device that is suitable for a number of different applications and environments, including those in close proximity to high-voltage cables and other components. One of the key benefits of this particular device is its ability to provide stable and reliable performance in high-temperature environments, up to +175°C. The PMPB25ENEX is a single-most transistor configuration, in which a single MOS transistor is mounted on a ceramic package. The device is capable of operating at high frequencies and has a low on-resistance (RDS(ON)) suitable for high-current, high-frequency applications. The operation of the PMPB25ENEX is similar to that of other MOSFETs. A tiny gate voltage is applied to the device, which turns the MOSFET on or off. When the device is off, the channel between the drain and the source is blocked and no current flows. When the device is on, the channel is open and the current can flow. In addition, the PMPB25ENEX has a low gate threshold voltage, which reduces the power required to drive the gate. The PMPB25ENEX is ideal for use in high-temperature applications, as its low threshold voltage minimizes power loss and its high thermal resistance minimizes self-heating. The device can handle pulsed load current up to 40A and exhibits excellent performance in high-frequency switching and amplifier applications. Additionally, the device has a low on-resistance (RDS(ON)) and high power handling capabilities, making it suitable for high-power applications. In summary, the PMPB25ENEX is a versatile device from several vendors designed for high-temperature and high-frequency applications. The device is capable of handling pulsed load current up to 40A and exhibits excellent performance in high-frequency switching and amplifier applications. Furthermore, the device has a low on-resistance (RDS(ON)) and high power handling capabilities. The device is highly resistant to damage from electrostatic discharge, making it an ideal choice for use in high-voltage switching applications.
The specific data is subject to PDF, and the above content is for reference
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