Allicdata Part #: | 1727-2704-2-ND |
Manufacturer Part#: |
PMPB20XNEAX |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 20V SOT1220 |
More Detail: | N-Channel 20V 7.5A (Ta) 460mW (Ta), 12.5W (Tc) Sur... |
DataSheet: | PMPB20XNEAX Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.14037 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 7.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 930pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 460mW (Ta), 12.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DFN2020MD-6 |
Package / Case: | 6-UDFN Exposed Pad |
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The PMPB20XNEAX field-effect transistor (FET) is a three-terminal, unipolar device. It is a voltage-controlled device whose current flow between drain and source is modulated by a linear gate-to-source voltage. They are widely used in wide range of electronic circuits, greatly facilitating the design of amplifiers and switches. As with all FETs, they depend on two parameters – the gate bias, and the drain-to-source current – to control the device.
The PMPB20XNEAX is capable of providing drain current of up to 1.2A, allowing it to support a wide range of applications, including high frequency RF and DC power control. It has a P-Channel Enhancement type FET design with an SOT-23 surface mount package and a maximum voltage rating of 20V. The gate threshold voltage of the PMPB20XNEAX is only 2V, making it ideal for lower power applications. Its transconductance is rated at 400 mS per volt.
The PMPB20XNEAX works on the principle of field effect. Generally FETs are operated in two modes – enhancement mode or depletion mode. In enhancement mode, the FET is in “off” state when no voltage is applied to the gate. When a positive voltage is applied to the gate of the FET, the channel widens, allowing current to flow between drain and source. In contrast, in depletion mode, the FET is “on” when no voltage is applied to the gate, and current is blocked when a negative voltage is applied to the gate.
The PMPB20XNEAX has a strong output power capability and an improved gate-source capacitance. This improves its efficiency and lowers the noise level. One of the main advantages of the PMPB20XNEAX over traditional FETs is its lower on-state resistance, allowing it to consume less power and produce higher efficiency in circuits with low gate bias. Its gate oxide also features a significant improvement in reliability and robustness.
The PMPB20XNEAX is widely employed in RF power amplifiers and DC motor control applications. It is also used in low voltage power supplies for audio and video equipment, as well as power switching circuits for lighting. In addition, the PMPB20XNEAX is also commonly used as an anti-surge protection device, as it can provide a high blocking voltage and fast recovery time.
The PMPB20XNEAX is a reliable and cost effective FET with improved power handling and performance characteristics. It is specially designed for high frequency applications and low power consumption. The field-effect transistor offers a low gate bias, fast switching speed and improved output power. It is suitable for a wide range of electronic applications, including RF power amplifiers, DC motor control, audio and video equipment and power switching circuits.
The specific data is subject to PDF, and the above content is for reference
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