RJK005N03FRAT146 Discrete Semiconductor Products |
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Allicdata Part #: | RJK005N03FRAT146TR-ND |
Manufacturer Part#: |
RJK005N03FRAT146 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | 2.5V DRIVE NCH MOSFET (AEC-Q101 |
More Detail: | N-Channel 30V 500mA (Ta) 200mW (Ta) Surface Mount ... |
DataSheet: | RJK005N03FRAT146 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05796 |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 200mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 4V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 580 mOhm @ 500mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RJK005N03FRAT146 is a junction field effect transistor (FET), also referred to as a metal oxide semiconductor field effect transistor (MOSFET). It belongs to the family of single FETs, which are commonly used in the power supplies, amplifiers, and other electronic circuits. It is especially useful for switching applications like motor control, lighting control, and power conversion.
A single FET is composed of two p-type and two n-type semiconductor layers. The two p-type layers form the source and drain and the two n-type layers form the gate. The gate controls the flow of current between the source and drain. Depending on the type of FET, the application and working principle differ. The RJK005N03FRAT146 is an N-channel FET, meaning that when there is no potential applied across the gate, current flows relatively freely between the source and drain. However, when a positive voltage is applied to the gate, the flow of current between the source and drain is diminished.
The RJK005N03FRAT146 is designed to have a low on-state resistance and a wide gate voltage range; this increases its efficiency and the current capacity in the circuit. The drain-source on-state resistance (Rds) is typically 0.2 Ohm, meaning that with a gate voltage of 5 volts, a current of 25 amperes can be safely passed through the FET. Its typical gate-drain breakdown voltage (BVdss) is rated at 30 volts, meaning it can handle up to 30 volts between the gate and the drain. The maximum operating temperature of the RJK005N03FRAT146 is 175˚C, so it is better suited for applications that require moderate temperatures.
Due to its low Rds and wide gate voltage rating, the RJK005N03FRAT146 is an effective choice for applications where high efficiency and low noise are desired. These applications may include motor control, lighting, and power conversion. In power conversion systems, the FET can be used to allow the current to pass with high efficiency into the load, eliminating heat and noise. In motor control applications, the FET can provide a rapid switching of the motor between forward and reverse without any loss of power. In lighting systems, the FET’s low Rds and wide gate voltage range can allow for both dimming and color-shifting, making it ideal for backlighting and lighting effects.
The RJK005N03FRAT146’s low Rds, wide voltage range, and high temperature rating make it a valuable component in a wide range of electronics projects. It is an effective choice for applications that require high efficiency and low noise, such as motor control, power conversion, and lighting. Its wide voltage range and high temperature rating also make it suitable for more demanding applications where it must operate over a broader temperature range.
The specific data is subject to PDF, and the above content is for reference
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