RJK0301DPB-02#J0 Discrete Semiconductor Products

The RJK0301DPB-02#J0 is a single N-channel enhancement mode MOSFET device. It is a member of the Fairchild discrete semiconductor family of transistors, FETs and MOSFETs.

RJK0301DPB-02#J0 features an incredible transconductance with excellent high frequency performance and very low capacitances. It is ideal for general purpose, low-voltage and high-speed switching. The drain-source breakdown voltage of this device is -20V, gate-source voltage of 30V and maximum continuous drain power of -2W.

The main applications of this transistor include wide range of consumer, telecom and industrial products. Some of them are field-effect transistors, high- frequency amplifiers and switching, input/output motor control, linear servos, logic-level converters, and other power management applications.

RJK0301DPB-02#J0 has a simple working principle. Using only a few input signals, the MOSFET device can switch a huge amount of current in a very short time. When the gate voltage is applied, it creates an electric field that opens the channel between source and drain, allowing current to flow between them. By controlling the amount of gate voltage, the MOSFET can regulate the magnitude of the current flowing through it, thus providing the necessary voltage and current needed for the application.

RJK0301DPB-02#J0 is a popular choice among a wide range of applications due to its low-cost and simple working principle. Its release has certainly revolutionized the power management industry. The high level performance, excellent frequency response and low input capacitance make it an ideal component for high-frequency switching, low-voltage and digital circuits.