Allicdata Part #: | RJK0703DPN-E0#T2-ND |
Manufacturer Part#: |
RJK0703DPN-E0#T2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 75V 70A TO220 |
More Detail: | N-Channel 75V 70A (Ta) 125W (Tc) Through Hole TO-2... |
DataSheet: | RJK0703DPN-E0#T2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4150pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.7 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Ta) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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RJK0703DPN-E0#T2 is a part of transistors such as field-effect transistors (FETs), metal-oxide semiconductor field-effect transistors (MOSFETs), and single FETs. It is designed for controlling and switching power in a circuit due to its small size, fast operation, and low operating voltage.
RJK0703DPN-E0#T2 has a wide range of application areas. It is used in computers and electronics to regulate signals, reduce power consumption, and minimize the size of the circuit. Additionally, they are used in power electronics applications to control motor voltage, regulate charging of batteries, and reduce fluctuations in power networks.
In general, RJK0703DPN-E0#T2 involves two distinct types of components, the field-effect transistor (FET) and the metal-oxide semiconductor field-effect transistor (MOSFET). Both of these types of transistors have similar structures, but with different electrons that allow metal oxide to cover a semiconductor material to form a metal oxide layer (MOS). The MOS FET is then used to control or modulate the current flow, by manipulating the voltage applied to the MOS layer.
In operation, the first step of the RJK0703DPN-E0#T2 process is to turn on the MOS transistor by applying a positive voltage to the gate terminal. This positive voltage creates an electric field between the gate and the source and the drain electrodes, which attracts the electrons from the source and the drain to the gate. This forms a low resistance (or short circuit) between the source and the drain, thus allowing current to flow. As the voltage across the source and drain decreases, the resistance of the MOS transistor increases, so the current flow decreases. In this way, the application of a voltage to the gate terminal controls the current flow between the source and the drain terminals.
In summation, the RJK0703DPN-E0#T2 is a transistor used to control or modulate the current flow, by manipulating the voltage applied to the gate terminal. This device is widely used in computers and electronics applications due to its small size, fast operation, and low operating voltage. Furthermore, its wide range of application areas, from power electronics to computer circuitry, makes it an essential and versatile tool for engineers and technicians.
The specific data is subject to PDF, and the above content is for reference
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