Allicdata Part #: | RJK0856DPB-00#J5TR-ND |
Manufacturer Part#: |
RJK0856DPB-00#J5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 80V 35A LFPAK |
More Detail: | N-Channel 80V 35A (Ta) 65W (Tc) Surface Mount LFPA... |
DataSheet: | RJK0856DPB-00#J5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-100, SOT-669 |
Supplier Device Package: | LFPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8.9 mOhm @ 17.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Ta) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RJK0856DPB-00#J5 is a single N-channel MOSFET transistor that can be utilized in a wide range of applications. MOSFET transistors offer high speed switching performance and low on-state resistance. This makes them ideal for signal switching, digital circuits, and high-frequency amplification. MOSFET transistors are also designed with the power to switch high power devices, such as motors.
The construction of the RJK0856DPB-00#J5 is based on a vertical N-channel. This is the most basic type of MOSFET can be found in many devices. It utilizes a P-Type substrate as the gate or control electrode and an N-Type layer as the channel or conducting electrode. The P-Type substrate is coated with an oxide material, which is used to control the flow of current. This oxide layer acts as an electrical insulator. The control electrode is used to modify the electrical field that exists between the two electrodes and thus controls the flow of current in the device.
The working principle of the RJK0856DPB-00#J5 transistor is related to bandgap voltage. The transistor operates by increasing or decreasing the voltage between the source and drain. This creates a repulsive force which causes the drain current to flow. When the source and drain are connected, the flow of current is limited by the gate voltage. If the gate voltage increases, the channel between the source and drain opens, increasing the drain current. Conversely, if the gate voltage decreases, the channel is closed and the drain current decreases.
The potential application fields of the RJK0856DPB-00#J5 range from high-frequency power switching, photonics, high-precision motion control, and automotive applications. Apart from that, the transistor is also suitable for high-power devices, such as LED lighting. In addition, being a single N-channel MOSFET transistor, the RJK0856DPB-00#J5 can also be used for signal switching, digital circuits, and high-frequency amplification. This makes them ideal for a variety of industrial and consumer applications.
In conclusion, the RJK0856DPB-00#J5 is a single N-channel MOSFET transistor with a wide range of applications. The principle of operation is based on bandgap voltage, which can be regulated using the gate voltage. Its potential applications range from high-frequency power switching, LED lighting, photonics, to high-precision motion control, and automotive applications. Overall, the RJK0856DPB-00#J5 is an efficient and reliable MOSFET transistor.
The specific data is subject to PDF, and the above content is for reference
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