RJK03M2DPA-00#J5A

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Introduction

RJK03M2DPA-00#J5A is a single N-channel enhancement-mode MOSFET, intended for use as a power switching device. This device offers a low RDSon, low gate charge and excellent high frequency switching behavior. It is an advanced power MOSFET in a ultra small SMD plastic package for surface mounting, making it well-suited for a range of applications such as power management, power source and DC-DC converters, lighting and consumer electronics.

Application Field

RJK03M2DPA-00#J5A is a great choice for applications that require high performance, excellent thermal management and small footprint. Since this MOSFET has internal avalanche protection, it is mainly used as a switch in high voltage, high frequency or high peak power conditions. It’s also used in a variety of consumer electronics and power management components such as chargers, AC/DC adapters, and LED drivers.

Working Principle

The working principle of this MOSFET is based on Charge Control of an Electrode. When the gates are forward biased, a thin conducting channel is created between the source and drain, allowing current to flow. This channel is controlled by the voltage applied to the gates. The more positive the gate voltage, the larger the channel and the more current that flows between the source and drain. This makes MOSFETs very efficient in controlling larger amounts of current with low voltages.

Advantages of RJK03M2DPA-00#J5A

• High Power handling capability: up to 125W
• Low RDS(ON)
• Low threshold voltage
• Low gate charge for easier drive
• Ultra small SMD package for surface mounting
• Excellent thermal management

Conclusion

RJK03M2DPA-00#J5A is an advanced single N-channel enhancement-mode MOSFET designed for use as a power switching device. It has a low RDSon, low gate charge and excellent high frequency switching behavior. Due to its small form factor and high current handling capability, it is suitable for a wide range of power management and consumer electronics applications such as chargers, AC/DC adapters and LED drivers. The working principle of this MOSFET is based on Charge Control of an Electrode, and its charge control capability increases its efficiency when compared to other transistors.

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