RJK0330DPB-01#J0 Discrete Semiconductor Products |
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Allicdata Part #: | RJK0330DPB-01#J0TR-ND |
Manufacturer Part#: |
RJK0330DPB-01#J0 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 30V 45A LFPAK |
More Detail: | N-Channel 30V 45A (Ta) 55W (Tc) Surface Mount LFPA... |
DataSheet: | RJK0330DPB-01#J0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-100, SOT-669 |
Supplier Device Package: | LFPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 22.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RJK0330DPB-01#J0 is a single, enhancement-mode, field-effect transistor (FET) built at discrete surface-mount technology (SMT). It is a device often used in the design and manufacture of various types of audio, image, and video equipment, as well as for other types of specialized electronic devices.
The RJK0330DPB-01#J0 offers a very low on-state resistance (RDS(on)), a high input-impedance (Zin), and a high transconductance. It has an extended maximum drain-source voltage (VDS) of 30 volts, an on-state current rating of 330mA, and an off-state drain leakage current of 10µA. The device\'s drain-source saturation voltage is very low, making it suitable for power switching applications in areas such as medical, communications and general industrial equipment.
In addition, the RJK0330DPB-01#J0 offers excellent thermal stability and offers a low noise figure compared to similarMOSFETs. This device also has a high input capacitance, making it suitable for switching low-frequency signals and audio signals. Furthermore, it consumes less power than standard FETs, making it an excellent solution for applications that require long battery life.
The working principle for the RJK0330DPB-01#J0 is based on the flow of electrons between the source and drain, which is controlled by the application of a gate voltage. This gate voltage can be adjusted to provide a desired threshold voltage at which the device will switch, either on or off. By changing the gate voltage, the device can be used to control the resistance between the source and drain.
The RJK0330DPB-01#J0 has a variety of applications, including switching power supplies, circuit protection circuits, current limiters, DC-DC converters, modulators and motor control. It can be used in various other applications requiring fast switching, low on-state resistance, and low power consumption. The device is also capable of switching large currents and is suitable for use in high-frequency applications, such as in radio-frequency transmitters.
The device is also suitable for a variety of other applications, such as audio amplifiers, video amplifiers, amplifiers for computer monitors, and a wide range of integrated circuits. It is widely used in the industry for a variety of applications, including power switch, voltage regulator, electronic switching, audio drivers and amplifiers.
In conclusion, the RJK0330DPB-01#J0 is an efficient and reliable FET that is well suited for use in various types of audio, image, and video equipment. It has a wide range of applications, and its features make it suitable for nearly any power switch, audio driver, voltage regulator, or integrated circuit. The device\'s low on-state resistance and high input impedance make it suitable for power switching applications, while its high transconductance and low drain-source saturation voltage make it an excellent choice for audio and video applications.
The specific data is subject to PDF, and the above content is for reference
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