Allicdata Part #: | RJK0659DPA-00#J5A-ND |
Manufacturer Part#: |
RJK0659DPA-00#J5A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 60V 30A WPAK |
More Detail: | N-Channel 60V 30A (Ta) 55W (Tc) Surface Mount 8-WP... |
DataSheet: | RJK0659DPA-00#J5A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | 8-WFDFN Exposed Pad |
Supplier Device Package: | 8-WPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The RJK0659DPA-00#J5A is an N-channel, enhancement-mode, MOSFET transistor. As a form of field-effect transistor (FET), it is designed to switch a low-level signal between its source and drain. When voltage is applied to the gate terminal, an electric field is created which modifies the conductivity of the channel connecting the source and drain. This helps regulate the current throughout the device, allowing it to operate as an amplifier in various electric circuits such as amplifiers, switches, and analog electronic signal processing systems.
The primary applications of the RJK0659DPA-00#J5A are for low-noise signal amplification, audio processing, video line drivers, and switching applications with low on-resistance. Its particular advantages include its durability, extremely low input/output capacitance, and low gate input voltage. As a bonus, it is RoHS compliant as well.
The fabricators of the RJK0659DPA-00#J5A, Raytheon Company and Richmond Semiconductor, have thoroughly tested the device and ensured its adherence to the RoHS standards. Strict quality control is applied during the production process with proven reliability being fundamental.
In terms of its physical construction, the RJK0659DPA-00#J5A is a single JFET transistor with a source terminal, a drain terminal, and a gate terminal. It also features a high thermal conductivity silicone conformal coating which helps ensure good thermal capacity and maximizes its electrical performance. The package size is a TO-220 AB outline. Size measurements are 2.8Lx3.7Wx4.9H mm with a 175 J/W thermal resistance for the thickness of 0.4mm.
The RJK0659DPA-00#J5A features a drain current rating of 4A and a drain-source voltage rating of 20V. It operates in a temperature range of -55°C to 175°C and the power dissipation of this device is 1.2W at 25°C. The maximum gate to source voltage of this device is 8V. Its RDS(on) resistance is typically 9.2 mOhms at 25C and its maximum RDS(on) resistance is 14 mOhms. Its gate turn-off time is 7ns typically and it has a fast switching speed of 2.4nS.
In terms of its working principle, the RJK0659DPA-00#J5A operates by using an electric field generated by the gate voltage to control the conductivity of an N-channel between its source and drain. The transistor is normally off until a specific voltage is applied to the gate. This alters the current through the channel, thus enabling the transistor to act as an amplifiers, switches, and analog electronic signal processors.
All in all, the RJK0659DPA-00#J5A is an extremely reliable single JFET transistor with a wide range of applications. Not only is it durable, it also has low input/output capacitance and low gate input voltage. It is an ideal choice for low-noise signal amplification, audio processing, video line drivers, and switching applications with low on-resistance. Thanks to its RoHS compliance, it is highly recommended for power-supply designs to comply with updated safety standard.
The specific data is subject to PDF, and the above content is for reference
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