RJK03M5DPA-00#J5A

Vgs(th) (Max) @ Id:	--
Package / Case:	8-WFDFN Exposed Pad
Supplier Device Package:	8-WPAK
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1890pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	10.4nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	6.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	30A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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RJK03M5DPA-00#J5AApplication Field and Working PrincipleThe RJK03M5DPA-00#J5A is a type of transistor, specifically a field-effect transistor (FET), from the class known as metal-oxide-semiconductor field-effect transistors (MOSFETs). It is a single device, meaning it consists of one active region of a semiconductor material, called the channel between the source and drain terminals, and does not include several active regions that act together to form a compound field effect transistor (CFET).Field effect transistors are used in many different electronic circuits, including amplifiers, oscillators, logic circuits, and instrumentation controls. As this particular type is a single MOSFET, its applications will be different than other types of transistors, such as BJTs (bipolar junction transistors) or JFETs (Junction Field-Effect Transistors). The RJK03M5DPA-00#J5A is an example of a “large-signal” type of MOSFET, which is best at switching large signals, making it well suited for use in applications such as audio amplifiers, and in power management circuits, like motor drivers and switch-mode power supplies. Now that we’ve gone over some of the uses for this particular transistor, let’s take a look at how it works.At its core, the RJK03M5DPA-00#J5A operates based on the movement of charge. The device is composed of a channel of n-type silicon, located between the source and drain terminals. This channel contains an electric field that can be modulated by voltage applied to the gate terminal. This gate voltage supplies the gate-to-channel capacitive coupling that creates the electric field, and so when a small voltage is applied to the gate, the electric field creates a conductive channel between the source and drain that allows current to pass.When a large voltage is applied to the gate, the electric field is increased, causing more current to be allowed to travel through the channel, creating a high-current low-resistance path. By applying the right amount of gate voltage the device can be turned “on” and “off” allowing it to switch electric signals from one part of an electrical circuit to another.The RJK03M5DPA-00#J5A also utilizes an integrated internal resistance, known as the "channel resistance Rch". This internal resistance allows for finer control of electric signals, making the device particularly well suited for audio applications as well as for precision power management circuits.In summary, the RJK03M5DPA-00#J5A is a single MOSFET transistor from the large-signal class, meaning it is well suited for use in applications that require switching of large signals. Its gate-to-channel capacitive coupling, integrated internal resistance, and low input capacitance allow it to be used in precision power management circuits, as well as in audio applications. Its use of an electric field modulation based on gate voltage allows it to be switched “on” and “off” in order to switch signals among different electronic components.

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