RJK03M5DNS-00#J5 Allicdata Electronics
Allicdata Part #:

RJK03M5DNS-00#J5TR-ND

Manufacturer Part#:

RJK03M5DNS-00#J5

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 30V 25A HWSON
More Detail: N-Channel 30V 25A (Ta) 15W (Tc) Surface Mount 8-HW...
DataSheet: RJK03M5DNS-00#J5 datasheetRJK03M5DNS-00#J5 Datasheet/PDF
Quantity: 5000
5000 +: $ 0.28426
Stock 5000Can Ship Immediately
$ 0.32
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-HWSON (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 15W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 12.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RJK03M5DNS-00#J5 is a type of discrete semiconductor device, more specifically a single Mosfet (Metal-Oxide-Semiconductor Field-Effect Transistor) integrated into an SOL (Surface Mounted Device) package, primarily used in control applications where a low on resistance and a low maximum gate-source voltage are required.

The term \'single\' refers to the fact that the device consists of a single type MOSFET, as opposed to FET packages that contain several FETs, such as an N-MOSFET and a P-MOSFET. This feature allows for the device to be used in applications with a higher current or voltage rating than a dual FET device, as well as requiring less board space. This type of Mosfet is a low cost switching device, and is used in applications such as motor control, voltage regulator, power supplies, pulse generators and other types of high-frequency circuits.

RJK03M5DNS-00#J5 Mosfets are typically Non-Designed, meaning they are not specifically designed for a particular application, but may be suitable for general control purposes. They are especially suited to switching applications, where their low on resistance and low maximum gate-source voltage are beneficial. The structure of the MOSFET ensures a low power loss in these types of applications.

The working principle of a MOSFET is based on the charge transfer action of MOS (Metal-Oxide-Semiconductor) capacitors. When a voltage is applied to the gate, the electric field induces charge carriers (electrons or holes) into the channel, depending on whether it is a n-type or p-type MOSFET. These charge carriers create a conductive path between the source and drain of the MOSFET and enable current to flow. When the gate voltage is removed, the charge carriers are no longer in the channel, and the current is cut off.

RJK03M5DNS-00#J5 MOSFETs are used in a variety of applications, but they are especially popular in motor control. These devices are used in DC motor control as they enable a wide range of speeds to be set, as well as providing a smooth operation without switching noise. It is also used in high-frequency power regulation, where their low on resistance is particularly beneficial.

RJK03M5DNS-00#J5 Mosfets are known for their low on resistance and low maximum gate-source voltages, making them ideal for use in control applications where a low power loss is required. They are used in a variety of applications, from motor control to voltage regulation, making them a versatile and cost-effective switching device.

The specific data is subject to PDF, and the above content is for reference

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