RJK0855DPB-00#J5 Discrete Semiconductor Products

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RJK0855DPB-00#J5 is a type of n-channel Enhancement Mode Field Effect Transistor (MOSFET), which is suitable for various switching applications. This type of MOSFET is commonly used in power control applications due to its excellent current transfer ratio and low on-state resistance.

This MOSFET is usually manufactured in a very small format and offers low gate charge and fast gate switching, making it ideal for inrush current as well as fast switching applications. It operates in both high and low frequency applications and can easily be switched into saturation mode for high voltage, high current, and low power operation.

Applications

This type of MOSFET is used in different applications such as:

• Switching power supply circuits
• HVAC control circuits
• High of low frequency circuit designs
• Soft start circuits
• Motor control circuits

Working Principle

MOSFET is a type of non-linear voltage controlled current source, which works on the principle that the current can be varied with the voltage applied to the gate terminal. When a low voltage is applied to the gate, the MOSFET acts as a switch and is referred to as either "on" or "off" state. When a certain voltage level is reached, the conduction state of the MOSFET will change to an "on" state and the current through the MOSFET will flow freely.

The gate terminal can also be used to adjust the current, providing a high degree of control and flexibility when used in power control applications. The MOSFET can be used in either the enhancement or depletion mode, depending on the type of power circuit design employed.

Advantages

The advantages of using RJK0855DPB-00#J5 MOSFET are:

• No physical contact between the gate and the switching element, reducing the risk of arcing or sparking.
• Low on-state and switching losses, allowing for efficient operation.
• Excellent thermal performance.
• High voltage and current handling capabilities.
• Low power dissipations in the on-state.
• Fast switching capability.

Disadvantages

The disadvantages of RJK0855DPB-00#J5 MOSFET include:

• A high gate charge and slow switching speed, making them less suitable for very high frequency applications.
• The insulation between the gate and the channel can breakdown if operated at high potentials.
• The drain to source capacitance can cause a timing delay when switching at high frequencies.

RJK0855DPB-00#J5 MOSFET is an ideal choice for switching power supplies, high voltage and high current applications. It is known for its excellent current transfer ratio and low on-state resistance when compared to other switching devices. Its fast switching speed and low gate charge make it suitable for high frequency applications.

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