Allicdata Part #: | RJK0603DPN-E0#T2-ND |
Manufacturer Part#: |
RJK0603DPN-E0#T2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 60V 80A TO220 |
More Detail: | N-Channel 60V 80A (Ta) 125W (Tc) Through Hole TO-2... |
DataSheet: | RJK0603DPN-E0#T2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4150pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The RJK0603DPN-E0#T2 is a type of field effect transistor (FET) located within the subcategory of single MOSFETs. A field effect transistor is a three-terminal electronic component, made with a conductive channel between two source terminals, referred to as the gate, and a drain. In contrast to other transistors, the current flow between source and drain is regulated by a voltage or current applied between the gate and source. Field effect transistors have been around since the 1950s and have been a staple component in practically every integrated circuit, along with bipolar junction transistors, either separately or combined together in CMOS circuits.
The RJK0603DPN-E0#T2 is particularly well-suited for use in power switches and for other circuits requiring high voltage and current levels. It is designed to offer high speed switching, low threshold voltage, and low RDS(on) and is particularly suitable for applications in the automotive, industrial, and consumer markets.
The working principle behind an FET is based upon the concept of transistor action. When a voltage is applied across the Gate-Source (G-S) terminal of the FET, an electric field is generated and this field modulates the conductivity of the channel between Source and Drain (S-D). As the voltage applied between G-S increases, the electric field causes the voltage gradient to increase, increasing the electron charge in the channel and allowing the current to flow between S-D. The higher the voltage between G-S, the larger the electron charge in the channel and the higher the current flow.
The application field for an RJK0603DPN-E0#T2 is mainly as a power switch and is popular for use in automotive, consumer, and industrial projects. Its application is wide enough that it could be used in virtually any application requiring high voltage and current switching, including LED driver circuits, DC to DC converters, inverters, solar photovoltaic systems, and more. As an example, one of the most common applications for an RJK060DPN-E0#T2 is as a switch for DC motors. A DC motor requires a high voltage and current to be able to be switched on and off, and the RJK060DPN-E0#T2 is able to provide the necessary switches needed to do that.
The RJK0603DPN-E0#T2 is a commonplace component in power switching applications, being used in a multitude of projects from automotive, to industrial and consumer applications. Its wide range of operations ensures that it can be used for just about any switching application needing high voltage and current levels, making it a particularly useful and versatile component.
The specific data is subject to PDF, and the above content is for reference
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