RJK0305DPB-02#J0 Allicdata Electronics

RJK0305DPB-02#J0 Discrete Semiconductor Products

Allicdata Part #:

RJK0305DPB-02#J0TR-ND

Manufacturer Part#:

RJK0305DPB-02#J0

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 30V 30A LFPAK
More Detail: N-Channel 30V 30A (Ta) Surface Mount LFPAK
DataSheet: RJK0305DPB-02#J0 datasheetRJK0305DPB-02#J0 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Mounting Type: Surface Mount
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Vgs (Max): +16V, -12V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RJK0305DPB-02#J0 is a high-performance field effect transistor (FET) that offers seamless device switching capabilities for a variety of applications. It is a single FET device featuring an ultra-low profile and a low intrinsic capacitance for fast switching operation. This device is suitable for a variety of uses, such as motor control and HVAC applications, and can handle a wide range of voltage and temperature ranges.

A single FET device such as the RJK0305DPB-02#J0 is composed of one highly concentrated material layer between two opposite polarity electrical contacts. The voltage applied between the two contacts creates a field in the material layer that controls the transfer of electrons between the contacts. This electric field controls the device\'s electrical characteristics. The FET can either allow current to pass through it, known as an ON state, or it can block the current, known as an OFF state.

When a gate voltage is applied to the FET, it alters the amount of current that passes through the device depending on the amount of voltage supplied. This mechanism offers efficient control of a device over a wide range of voltage and temperature ranges. This makes FETs an excellent choice for devices such as motor control, HVAC systems, and many other applications. The ultra-low profile of the RJK0305DPB-02#J0 also reduces its physical size while still providing exceptional performance.

In addition, the RJK0305DPB-02#J0 features an exceptionally low intrinsic capacitance which enables it to switch quickly. This helps reduce power losses associated with the device\'s switching operation and provides superior device reliability. This makes the RJK0305DPB-02#J0 ideal for rapid switching applications, such as switching power supplies and power converters.

The RJK0305DPB-02#J0 is an advanced field effect transistor that provides superior performance for a variety of applications. Its ultra-low profile and low intrinsic capacitance provide fast switching capabilities for improved device reliability and power efficiency. This device is suitable for motor control, HVAC systems, and other applications that require efficient control of a device over a wide range of voltage and temperature ranges.

The specific data is subject to PDF, and the above content is for reference

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