RJK0853DPB-00#J5 Allicdata Electronics

RJK0853DPB-00#J5 Discrete Semiconductor Products

Allicdata Part #:

RJK0853DPB-00#J5TR-ND

Manufacturer Part#:

RJK0853DPB-00#J5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 80V 40A LFPAK
More Detail: N-Channel 80V 40A (Ta) 65W (Tc) Surface Mount LFPA...
DataSheet: RJK0853DPB-00#J5 datasheetRJK0853DPB-00#J5 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 65W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6170pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RJK0853DPB-00#J5 is a single N-channel, depletion mode, enhancement-mode field-effect transistor (FET). This type of transistor is used to regulate the flow of current and provides amplification. It is mainly used in digital circuits and communication circuits.

The FET works by modulating the magnitude of the induced electric field on a chip formed of semiconductor material. A silicon substrate acts as the base which contains three leads – one source, one gate and one drain. Applying a positive bias to the gate will turn on the transistor, causing a current to flow between the source and the drain. If a negative bias is applied, the transistor is off and no current will flow. The modulation of current is what makes the FET so useful in a variety of electronic systems.

A key feature of the RJK0853DPB-00#J5 is its low capacitance and leakage characteristics, which make this type of transistor suitable for use in low-noise, medium-to-high-frequency circuits and low-power, high-speed circuits. This type of transistor is also relatively simple and reliable compared to others, which makes it a popular choice for a wide range of applications.

The RJK0853DPB-00#J5 is mainly used in digital memory circuits, audio amplifiers, and communication circuits. Its small size and simple construction make it ideal for use in applications that require a low power drain. It is also suitable for a variety of digital and analog high-frequency and high-power applications. Additionally, the nature of the device means that it has a very low noise, which is important in applications such as data communications, satellite and wireless communications.

The RJK0853DPB-00#J5 is also useful in wide variety of analog and digital applications. In analog applications, it can be used for signal peaking and filtering, as well as for radio frequency (RF) signal amplification and voltage regulation. In digital applications, the device can be used for signal modulation, signal shaping and pulse width modulation.

In order to ensure the best performance out of the RJK0853DPB-00#J5, it is important to run it within its specified electrical parameters. It should be operated at the specified voltage, current and frequency to ensure that the device performs optimally. It is also important to note that proper ventilation is essential to the operation of the device and that it must be properly heatsinked for optimal performance.

The specific data is subject to PDF, and the above content is for reference

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