RJK005N03T146 Discrete Semiconductor Products |
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Allicdata Part #: | RJK005N03T146TR-ND |
Manufacturer Part#: |
RJK005N03T146 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 500MA SOT-346 |
More Detail: | N-Channel 30V 500mA (Ta) 200mW (Ta) Surface Mount ... |
DataSheet: | RJK005N03T146 Datasheet/PDF |
Quantity: | 12000 |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 200mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 4V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 580 mOhm @ 500mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RJK005N03T146 (also referred to as the R5K-3T146) is a high-voltage, high-current field-effect transistor (FET) from RFHIC Corporation. It is a single N-channel, depletion mode FET designed for use in applications in which up to 150 A of current is required, such as high-power amplifiers, switching amplifiers, Class D power amplifiers, and wideband amplifiers.
The R5K-3T146 provides the highest power density, the widest bandwidth and the most efficient signal conversion currently available. It is designed to operate at frequencies from DC to 3GHz, with high gain and low noise. It is a dual package device that features multiple pins and optional heat sink assembly, making it easy to install, mount and operate in a wide range of applications.
The R5K-3T146 has a wide variety of applications, including mobile phone applications, wireless communication systems, power conversion, RF power amplifiers, automotive, military and aerospace applications, medical equipment and digital video systems. Its performance and features make it well suited for high power, high efficiency and high frequency applications in which the linearity, stability and frequency of operation require a high-performance FET.
The R5K-3T146 FET operates on a principle of depletion of electrons from the N-type material. When the gate voltage of the FET is increased, the electrons in the N-type material are depleted near the gate and the current is cut off. When the gate voltage is decreased, the channel is reversed and the current flows through the FET again. This is the most important characteristic of a FET, because it allows for efficient current flow control.
Other important characteristics of the R5K-3T146 include high power operation, low distortion, high gain and low noise. The high power operation ensures that the device can handle high current levels, while the low distortion ensures that the signal is converted without distortion or loss of power. The high gain is also important because it ensures that the signal is amplified with high efficiency. Lastly, the low noise ensures that the signal is not contaminated by unnecessary noise.
Overall, the R5K-3T146 FET is an excellent choice for a wide range of applications that require high power, high efficiency and high frequency performance. Its wide variety of features and performance characteristics make it suitable for a number of applications in which the linearity, stability and frequency of operation require a high-performance FET.
The specific data is subject to PDF, and the above content is for reference
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