RN2910FE,LF(CB Discrete Semiconductor Products |
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Allicdata Part #: | RN2910FELF(CBTR-ND |
Manufacturer Part#: |
RN2910FE,LF(CB |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.1W ES6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2910FE,LF(CB Datasheet/PDF |
Quantity: | 4000 |
4000 +: | $ 0.01687 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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RN2910FE,LF is an array of transistors with an embedded pre-biased gate. The array of prefabricated transistors provides for a cost-effective and high-performance solution. It is designed for high-voltage and/or high-current applications, such as power switching and motor control.
The RN2910FE,LF is a Bipolar Junction Transistor (BJT). It is comprised of two junction-connected p-type and n-type semiconductor materials, forming two PN-diodes. This type of transistor operates by controlling the current or voltage flow through its base which, in turn, controls the current flow in the collector and emitter. The base is pre-biased, meaning that it contains a built-in potential, driven by either a voltage or a transistor, allowing current to flow through the junction between the base and the emitter.
The array of transistors is fabricated to provide optimum performance and high-voltage/current capabilities. This design is based on vertical emitter stripes that are connected perpendicular to the base stripes. The vertical stripes reduce the current path through the transistor to just a few millimeters and reduce the capacitance of the device. This allows for high switching and conduction speeds, high current-handling capability, and low EMI.
The RN2910FE,LF is intended for motor control, signal filtering, and power electronics applications. It is also suitable for switching power supplies, converters, current and voltage regulation, and motor control. It offers a wide range of operating conditions making it suitable for a variety of applications.
The RN2910FE,LF is compatible with various current and voltage control circuits. It can be used in high-voltage/high-power applications, while still maintaining its low-power characteristics. It has a maximum operating voltage of 600V and an operating current range of 270mA to 1.2A. It is available in a range of package sizes and shapes, making it suitable for a variety of applications.
The RN2910FE,LF is a cost-effective and high-performance solution to several applications. It is a pre-biased array of transistors that provides industry-standard performance at an affordable price. The array has a wide range of operating parameters, ranging from high voltage/high current to low power applications. This makes it suitable for a wide range of applications. The array\'s built-in pre-biased gates allow for an efficient current control and its vertical stripes reduce conduction and capacitance, making it an ideal solution for motor control, signal filtering, and power electronics.
The specific data is subject to PDF, and the above content is for reference
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