RN2907(T5L,F,T) Allicdata Electronics
Allicdata Part #:

RN2907(T5LFT)TR-ND

Manufacturer Part#:

RN2907(T5L,F,T)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2PNP PREBIAS 0.2W US6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: RN2907(T5L,F,T) datasheetRN2907(T5L,F,T) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Description

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The RN2907 (T5L,F,T) is a bipolar transistor array comprised of multiple transistors configured in a pre-biased format. The pre-bias configuration means that the base-emitter junction is already polarized and no external bias is required. The RN2907 is designed for use in low-power applications and offers a very simple, reliable and highly efficient solution for low-power circuitry.The RN2907 is composed of 5 different components: four transistors, a pair of resistors, and a Zener diode. The four transistors, which form the core of the array, are arranged in an H-bridge configuration and are coupled together in order to control the base-emitter current and thus the output current. The two resistors are connected in series between the inputs and outputs of the array, and the Zener diode is connected in parallel with the output. The H-bridge configuration ensures a symmetrical current flow and the resistor-Zener diode configuration creates a pre-bias voltage at the transistors’ base-emitter junction. The pre-bias voltage ensures that the base-emitter current is maintained in the correct range and that the external bias circuit is not needed. Additionally, the Zener diode creates a voltage drop which further increases the stability of the circuit.The advantages of the RN2907 are numerous. It is very power efficient with its power dissipation of only 0.1W (25°C), which allows it to be used in low-power applications. It also provides superior thermal and ESD protection due to its Zener diode. Furthermore, its low dropout voltage of 0.6V increases the efficiency of the design, thus reducing the power consumption.The RN2907 can be used in a wide range of low-power applications such as LED drivers, motion control, logic circuits, and voltage regulation. The key to its success is its pre-biased configuration which eliminates the need for an external bias circuit and its high power efficiency. Additionally, its low dropout voltage makes it an ideal choice for low-voltage applications.The RN2907 has been successfully used in a variety of applications and is known for its reliable performance and low power consumption. Its pre-biased configuration allows for easy implementation and its small size makes it suitable for use in space-constrained applications. In summary, the RN2907 is an ideal solution for low-power applications due to its pre-biased configuration, high power efficiency, and small form factor.

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