RN2966FE(TE85L,F) Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	200MHz
Power - Max:	100mW
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	ES6

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The RN2966FE (TE85L, F) is a pre-biased transistor array and is part of transistors such as bipolar junction transistors (BJT). It is used in a number of applications where high-current, high-voltage, and fast switching operations are desired. This device uses two complementary transistors within the same package, to offer a number of advantages in operation, resulting in improved power consumption, size, and reliability.
The RN2966FE is primarily used in resistive and diode-based applications, for power supply sequencing and clamping, as well as for high-side switched loads and driver circuits. It can also be used for the protection of analog, digital, or logic circuits, and in radio frequency (RF) applications. In addition, the device is used in automotive applications, such as diagnostics and powertrain, as well as consumer electronic applications, including LED drivers and wireless MIDI.
The working principle of the RN2966FE is based on the concept of a pre-biased transistor, which is a transistor that is partially biased before being turned on. This allows the device to achieve a quicker response time for switching, along with reduced power consumption during operation. To achieve this, the device utilizes two complementary transistors, one NPN type and one PNP type, along with a resistive divider. The resistive divider is used to partially bias the transistors, which can then be turned on and off quickly when the voltage from the divider is changed.
When the RN2966FE is in operation, the NPN transistor is turned on first and the current is driven through the device, while the PNP transistor is turned off. This allows the device to achieve a high current gain, as well as a low on-resistance and fast switching times. In addition, the device can also be used as an inverter, where the NPN and PNP transistors are switched according to the signal applied to the input. The device is able to achieve a maximum peak voltage of 130V and a maximum current of 4A.
In order to ensure the safe operation of the device, it is important to make sure that the power supply and the environment around the device are suitable for its operation. This includes taking into consideration the operating temperature ranges of the device, as well as the device\'s current and voltage ratings. Additionally, it is important to make sure that any protective mechanisms, such as diodes and voltage regulators, are properly configured to ensure optimal performance.
Overall, the RN2966FE is a versatile transistor array with a range of applications and a simple design. It is able to provide quick switching times and reduced power consumption, along with improved reliability. This makes the device suitable for a number of applications, including automotive and consumer electronic applications. Additionally, the device has a wide operating temperature range, making it suitable for a variety of environments. While it is important to ensure that the environment and power supply are suitable for the device, the RN2966FE can be a reliable and effective addition to a range of applications.

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