Allicdata Part #: | RN2911LFTR-ND |
Manufacturer Part#: |
RN2911,LF |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.2W US6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2911,LF Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.03195 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
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The RN2911 LF transistor is a high-power bipolar junction (BJT) array that provides an efficient and reliable power solution for a variety of low-frequency applications. The RN2911 LF is designed to provide low-frequency, high-current pulsed power in an industry-standard footprint. It provides a wide range of current levels and pulse durations, making it suitable for a variety of low-frequency applications, including undervolting protection, resonant current control, and PWM control.
The RN2911 LF consists of eight NPN Junction transistors connected in a pre-biased array configuration. This configuration allows the user to tailor the output current to the desired application. Each transistor is capable of delivering up to 50mA of current, allowing for up to 400mA of total current. The output voltage can be adjusted using an external control network, allowing for higher voltage and higher current levels when needed.
The RN2911 LF also has several features that make it an attractive solution for low-frequency applications. The transistors are pre-biased by an external resistor divider network, eliminating the need for an external bias network during operation. This simplifies the design process and can help save time and reduce cost in the development process. The RN2911 LF also has built-in undervoltage protection, temperature compensation, and short circuit protection. These features help ensure the integrity of the circuit and increase system reliability.
In addition to its low-frequency applications, the RN2911 LF is well-suited for use in automotive and industrial applications. It can be used in systems such as motor controls, servo drives, inverters, discharge controllers, and more. The RN2911 LF is available in surface mount packages, making it easy to integrate into existing systems. The RN2911 LF is part of the industry-standard RN2911 LF series, which includes arrays, MOSFETs, Thyristors, IGBTs, and more.
In summary, the RN2911 LF transistor is a versatile bipolar junction transistor array that is well-suited for low-frequency applications. It provides an efficient and reliable power solution, with features such as pre-biased transistors, built-in undervoltage protection, temperature compensation, and short circuit protection. The RN2911 LF is available in surface mount packages and is part of the industry-standard RN2911 LF series, which includes MOSFETs, Thyristors, and IGBTs.
The specific data is subject to PDF, and the above content is for reference
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