RN2964FE(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN2964FE(TE85LF)TR-ND |
Manufacturer Part#: |
RN2964FE(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.1W ES6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2964FE(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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The RN2964FE(TE85L,F) transistor array is specifically designed for use in electronics applications. It is one of the most popular pre-biased transistors in the world today. It is particularly suitable for applications involving high frequency switching, audio signal conditioning and general purpose switching applications.
The RN2964FE(TE85L,F) is a dual-base pre-biased transistors array made up of four high power transistors in a single package. This transistor array can be used either as a stand-alone device or as part of a larger circuit. Generally, it is considered to be an ideal choice for low-voltage and low-power applications, due to its low power consumption and high operating temperature range.
The RN2964FE(TE85L,F) offers a number of distinct advantages over other transistors. For one, it is extremely flexible and can be used in a variety of applications. It also has excellent thermal stability, enabling it to perform well even in extreme environmental conditions. Additionally, its compact size allows it to be conveniently integrated into any application, regardless of the system\'s size and complexity.
The RN2964FE(TE85L,F) is based on a unique arrangement of four high power transistors that are connected in parallel. Each of the four transistors is individually biased so that they all operate with the same polarities and upon the same inputs. Each of the four transistors can be independently operated, allowing for a wide variety of circuit configurations and operations.
The four transistors in the RN2964FE(TE85L,F) are connected with what is known as “pre-biased” circuitry. This circuitry is designed to ensure that each of the four transistors is operating in its optimal range, which maximizes performance and reliability. Additionally, pre-biased circuitry eliminates problems that can occur when the bias voltage is incorrect or when transistors with mismatched characteristics are used.
Due to its combination of good thermal stability, excellent miniaturization, and pre-biased circuitry, the RN2964FE(TE85L,F) is used in a wide range of electronics applications. It is highly suitable for high frequency switching, audio signal conditioning, and general purpose switching applications. Additionally, the RN2964FE(TE85L,F) is used in many consumer products, such as cellular phones and laptop computers, to improve their performance and reliability.
The RN2964FE(TE85L,F) is a reliable and efficient pre-biased transistor array that provides excellent performance for a wide range of applications. By utilizing its unique pre-biased circuitry and miniaturization, this transistor array offers maximum flexibility and performance for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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