SI2302ADS-T1-GE3

Vgs(th) (Max) @ Id:	1.2V @ 50µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	700mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	300pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	10nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	60 mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2.1A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The SI2302ADS-T1-GE3 transistor is a close cousin of the field-effect transistor (FET). Like an FET, a MOSFET is a type of field-effect transistor. It\'s made up of three components -- a source, a gate and a drain. The flow of current is controlled by the voltage on the gate, which is used to turn the device "on" or "off."The SI2302ADS-T1-GE3 is a single-gate MOSFET that is designed to be used as an access device in a motherboard or other system to provide isolation and secure appropriate access to certain functions. This transistor has a low on-resistance, fast switching, and variable threshold voltages so it can be used in a wide range of applications.One of the main applications of the SI2302ADS-T1-GE3 MOSFET is its use as a switching device in power electronics circuits. It can be used to control the flow of current between two points in an electronic circuit. By controlling the amount of current passing through the transistor, the designer can control the amount of power delivered to the device it is used to power. This is especially useful in designing power-efficient systems, as the amount of power being delivered can be adjusted to just the right amount.The SI2302ADS-T1-GE3 MOSFET is also widely used for analog switching applications. Due to its low on-resistance and fast switching capabilities, it is suitable for controlling up to 10A of current. This makes it an ideal choice for a variety of analog switching applications, such as the control of motor speed, the regulation of the flow of air, or the regulation of the flow of currents between two points.In addition to its power and analog applications, other uses of the SI2302ADS-T1-GE3 MOSFET are in interface and gate circuits. It can be used as a switch in certain interface circuits to control the flow of current or as a gate to control the flow of signals in certain gate circuits.The working principle of the SI2302ADS-T1-GE3 MOSFET is based on the fact that the amount of current flowing through the channel is dependent on the voltage applied to the gate. When the gate voltage is low, the current through the channel is low. When the gate voltage is increased, the current through the channel increases. The SI2302ADS-T1-GE3 is a very efficient switch as the channel resistance is very low when the device is on.The SI2302ADS-T1-GE3 is a very versatile transistor, suitable for a wide range of applications. Its low on-resistance, fast switching, and variable threshold voltages make it an ideal choice for both power and analog applications. It is a great choice for designers looking to implement a secure and efficient switching device into their design.

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