
Allicdata Part #: | SI2311DS-T1-GE3-ND |
Manufacturer Part#: |
SI2311DS-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 8V 3A SOT23 |
More Detail: | P-Channel 8V 3A (Ta) 710mW (Ta) Surface Mount SOT-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 800mV @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 710mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 970pF @ 4V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 3.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI2311DS-T1-GE3 transistor is a popular piece of technology used in a wide range of applications, particularly those involving switching, amplifying, and regulating circuits. It is a single-gate mosfet transistor, or a “metal-oxide-semiconductor field-effect transistor”. It belongs to the class of transistors known as field-effect transistors, or FETs, meaning it operates by using a voltage or electric field to control its conductivity. In this way, FETs can regulate current and change the properties of a circuit.
The SI2311DS-T1-GE3 transistor has a power MosFET structure, meaning it has a single gate. This is one of the advantages of this kind of transistor, as it gives it significantly more flexibility and power, increasing the voltage ratings and switching speeds possible with this kind of transistor. The device also has an integrated short-circuit protection system, meaning it is protected from short-circuiting and thereby reducing the possibility of damage. It also has a high-temperature performance, meaning it can operate efficiently at temperatures of over 200°C, increasing its overall reliability.
In order to understand how a SI2311DS-T1-GE3 transistor works, it is important to have an understanding of the FET principle. FETs work by having a gate, a source, and a drain. The gate is the control lead, and when a voltage is applied to it, it will create an electric field, which affects the flow of electrons between the source and the drain. This is known as the field-effect, and is what allows FETs to act as switches and control the current flow. This means that when the voltage is applied in one direction, the source to the drain current is high, and the drain to source current is low, and when the voltage is reversed, the opposite happens.
The SI2311DS-T1-GE3 is a popular choice for applications requiring switching, such as motor control, power supplies, motor amplifiers, and other systems. It is also used in voltage regulation applications, such as in power conversion or DC-DC controllers. It can also be used in automotive and industrial applications, as well as in home appliances.
The SI2311DS-T1-GE3 is a popular option for most applications requiring FETs and single-gate MOSFETs. It is reliable, has high voltage ratings, and is able to operate at temperatures up to 200°C. It also has an integrated short-circuit protection system, which increases its overall reliability. By understanding the working principle of FETs, and how the SI2311DS-T1-GE3 functions, engineers and designers can take advantage of its high performance capabilities, particularly when dealing with switching and current regulation applications.
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SI2307BDS-T1-E3 | Vishay Silic... | -- | 9000 | MOSFET P-CH 30V 2.5A SOT2... |
SI2308CDS-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 60V 2.6A SOT2... |
SI2319DS-T1-GE3 | Vishay Silic... | 0.22 $ | 1000 | MOSFET P-CH 40V 2.3A SOT2... |
SI2333DS-T1-E3 | Vishay Silic... | -- | 183000 | MOSFET P-CH 12V 4.1A SOT2... |
SI2302DDS-T1-GE3 | Vishay Silic... | -- | 18000 | MOSFET N-CHAN 20V SOT23N-... |
SI2323DS-T1 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 3.7A SOT2... |
SI2333DS-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET P-CH 12V 4.1A SOT2... |
SI2308BDS-T1-GE3 | Vishay Silic... | -- | 186000 | MOSFET N-CH 60V 2.3A SOT2... |
SI2312-TP | Micro Commer... | 0.06 $ | 1000 | N-CHANNEL MOSFET, SOT-23 ... |
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SI2303BDS-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 1.49A SOT... |
SI2333-TP | Micro Commer... | 0.06 $ | 1000 | P-CHANNEL MOSFET, SOT-23 ... |
SI2303CDS-T1-E3 | Vishay Silic... | 0.14 $ | 1000 | MOSFET P-CH 30V 2.7A SOT2... |
SI2303BDS-T1 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 1.49A SOT... |
SI2351DS-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 2.8A SOT2... |
SI2367DS-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET P-CH 20V 3.8A SOT-... |
SI2343DS-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 3.1A SOT-... |
SI2316DS-T1-GE3 | Vishay Silic... | 0.21 $ | 1000 | MOSFET N-CH 30V 2.9A SOT2... |
SI2309CDS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 1.6A SOT2... |
SI2325DS-T1-GE3 | Vishay Silic... | -- | 42000 | MOSFET P-CH 150V 0.53A SO... |
SI2333CDS-T1-E3 | Vishay Silic... | -- | 12192 | MOSFET P-CH 12V 7.1A SOT2... |
SI2341DS-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 2.5A SOT-... |
SI2306-TP | Micro Commer... | 0.06 $ | 1000 | N-CHANNEL MOSFET, SOT-23 ... |
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SI2303BDS-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 1.49A SOT... |
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