SI2333CDS-T1-E3 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI2333CDS-T1-E3 is a high-speed enhancement-mode, monolithic vertical DMOSFET transistor. It is currently used in a wide variety of power applications, including power management and DC-DC converters. This device is capable of providing low on resistance, high block voltage, and low capacitance. It is capable of operating over a wide temperature range of -55 to +175 degrees Celsius.

The SI2333CDS-T1-E3 is specifically designed for high-current, low-voltage applications, including motor drives, audio and video equipment, lighting, power supplies, and more. This device is intended for use in harsh and hazardous environments due to its excellent electrical performance and production quality. This device features high-speed switching and low losses.

The SI2333CDS-T1-E3 is a single N-channel enhancement-type device. This device utilizes a single vertical DMOS structure with a drain field plate and a source-gate guard ring. This device has an optimized channel and a low-resistance channel. Additionally, the device is capable of handling peak currents of up to 13 A and voltages up to 850 V. This device has a low threshold voltage, high switching speed, and a low on-resistance when compared to other transistors.

The SI2333CDS-T1-E3 is a very reliable device and is used in a wide range of applications. Its excellent performance and low losses make it a perfect fit for applications involving motor drives and power management. Its high frequency and low ESR makes it ideal for applications involving high-voltage switching. Its high-temperature tolerance and low-resistance channel also make it an excellent choice for high-power and high-voltage applications. Additionally, since this device requires minimal gate drive it is ideal for low-power devices.

The SI2333CDS-T1-E3 working principle is fairly simple: A positive voltage on the gate controlling the voltage on the source, effectively turning the device on. When the device is on, the current flows from the drain to the source, and the voltage on the drain will be lower than the voltage on the source. This device also has a very low threshold voltage, which means that it can be turned on at lower voltages. The device will turn off when the gate voltage is reduced to a point at which the current is no longer able to flow.

The SI2333CDS-T1-E3 is a very reliable and high-performance device. Its wide range of operation and excellent electrical performance make it a great choice for a variety of power management and motor drive applications. Its low threshold voltage and high switching speed make it an ideal choice for high-voltage switching applications. Additionally, since this device requires minimal gate drive it is also perfect for low-power devices. The SI2333CDS-T1-E3 is sure to continue to be an excellent choice for a variety of power management applications.

The specific data is subject to PDF, and the above content is for reference