SI2308BDS-T1-GE3 Discrete Semiconductor Products |
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| Allicdata Part #: | SI2308BDS-T1-GE3TR-ND |
| Manufacturer Part#: |
SI2308BDS-T1-GE3 |
| Price: | $ 0.58 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V 2.3A SOT23-3 |
| More Detail: | N-Channel 60V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Sur... |
| DataSheet: |  SI2308BDS-T1-GE3 Datasheet/PDF |
| Quantity: | 186000 |
| 1 +: | $ 0.58000 |
| 10 +: | $ 0.56260 |
| 100 +: | $ 0.55100 |
| 1000 +: | $ 0.53940 |
| 10000 +: | $ 0.52200 |
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.09W (Ta), 1.66W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.8nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 156 mOhm @ 1.9A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.3A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SI2308BDS-T1-GE3 is a general-purpose N-channel enhancement mode MOSFET used usually in consumer electronic products. It has excellent switching characteristics and is suitable for applications such as DC-DC converters, load switches, ground switches, reverse battery protection, automotive power applications and consumer power supplies. In this article, we will discuss the application field of the SI2308BDS-T1-GE3 and its working principle.
Application Field of the SI2308BDS-T1-GE3
The SI2308BDS-T1-GE3 is an N-channel MOSFET that is useful in a variety of application fields. It may be used in DC-DC converters due to its ability to handle large currents and voltages. It can also be used as a load switch in systems that require power on/off control. It is often used for ground switching, reverse battery protection and in automotive power applications. Additionally, it can be used in consumer power supplies for switching power on and off.Working Principle of the SI2308BDS-T1-GE3
The SI2308BDS-T1-GE3 is an N-channel enhancement mode MOSFET. The working principle of the MOSFET involves the regulation of current flow between the drain and source terminals by the gate voltage. The gate terminal is insulated from the other terminals, allowing the voltage at the gate to be used to regulate the current flow between the source and drain.When the gate voltage is low, the MOSFET is in the “off” state. In this state, the drain-source current is small and the device effectively acts as an open switch. When the gate voltage is increased, the drain-source current increases as well, and the MOSFET goes into the “on” state, in which the drain-source current is relatively high.Conclusion
The SI2308BDS-T1-GE3 is a general purpose N-channel enhancement mode MOSFET, suitable for a variety of applications, including DC-DC converters, load switches, ground switches, reverse battery protection, automotive power applications, and consumer power supplies. Its working principle involves the regulation of current flow between the source and drain terminals by the gate voltage. With its excellent switching characteristics, the SI2308BDS-T1-GE3 is an ideal choice for a multitude of power management applications.The specific data is subject to PDF, and the above content is for reference
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