SI2315BDS-T1-E3

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The SI2315BDS-T1-E3 is an N-channel enhancement-mode power MOSFET. It is a general purpose FET designed to support a wide range of applications such as load switch and DC-DC conversion. The device features an embedded N-channel MOSFET die, a built-in gate resistor and internal ESD protection, making it easy to apply and robust.

The SI2315BDS-T1-E3 has a drain-source breakdown voltage of 28V and a breakdown voltage temperature coefficient of 75mV/K. It is rated for a continuous drain current of 9.1A and a pulsed drain current of 18A. The on-state resistance of the device is 7mΩ at 10V and 2.2mΩ at 20V. The maximum allowable power dissipation of the device is 6.4W and the maximum junction temperature is 175°C.

The SI2315BDS-T1-E3 has a wide operating range and is often used to support a variety of load switch and DC-DC conversion applications. The device is suitable for operation from -55°C to 175°C ambient temperature range. It offers a maximum gate threshold voltage of 1.4V and a maximum gate-source voltage of 20V.

In load switch applications, the SI2315BDS-T1-E3 can be used to connect and disconnect the load from the power supply. The device can supply up to 9.1A of continuous current with a maximum dissipation of 6.4W.

In DC-DC conversion applications, the SI2315BDS-T1-E3 can be used to control the output voltage. The device can be used to step up or step down the output voltage of the power supply. The device can also be used to control the power supply current.

The working principle of the SI2315BDS-T1-E3 is based on the P-channel MOSFET. The P-channel MOSFET is composed of four main parts: the source, the drain, the gate, and the body. The source and the drain are the two metal electrodes that control the flow of current. The gate is the control electrode that gives the device its switching capabilities. When a voltage is applied to the gate, it causes the MOSFET to turn on or off, depending on the polarity of the applied voltage. The body, or substrate, provides the electrical insulation between the other three parts.

The SI2315BDS-T1-E3 can be used to switch signals and voltages with very high speed and low power loss. The MOSFET features a low gate charge and low total gate-source capacitance, making it suitable for high speed switching applications. The device also features a low on-state resistance, making it suitable for efficient power conversion.

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