SI2328DS-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SI2328DS-T1-GE3 is a type of transistor known as a Field Effect Transistor (FET) or Metal Oxide Semiconductor Field Effect Transistor (MOSFET). FETs are semiconductor devices that consists of a channel of semiconductor material between a source and a sink that acts as a field effect to control the transfer of electrical signals between the two. The SI2328DS-T1-GE3 is a single FET, meaning it contains only one channel in its design.

The SI2328DS-T1-GE3 is a type of MOSFET that is designed for power management applications. It is commonly used in consumer electronics, such as televisions and computer displays, as well as automotive applications, such as engine management systems. The SI2328DS-T1-GE3 is designed for use in low-voltage, medium-to-high power applications, with a breakdown voltage of 20 volts, a gate threshold voltage of 4 volts and a drain-source on-state resistance of 0.3 ohms.

The working principle behind the SI2328DS-T1-GE3 is based on the gate-source voltage. When the voltage between the gate and source terminals is increased, the channel or ‘on’ region between the source and drain is widened and an electric current can flow through it. Conversely, when the gate-source voltage is decreased, the ‘on’ region is narrowed and the current is blocked. This is known as the transconductance effect.

In practical terms, the SI2328DS-T1-GE3 is mostly used in switching applications, such as voltage converters and motor controllers. By switching the gate-source voltage on and off, the current can be turned on and off in a matter of nanoseconds, allowing the user to control the flow of electricity to the device with precision. The high efficiency of the MOSFET, with its low power dissipation, low input capacitance and low gate charge, makes it ideal for use in applications that require accurate power management.

The SI2328DS-T1-GE3 is also a good choice for sensing applications, as the current through the drain can be measured by connecting a small voltage divider between the drain and source. This allows the user to monitor the voltage drop across the drain and source, which will provide an accurate measure of the drain current. This device is also suitable for use in linear amplification, as the small gate-source voltage can be used to adjust the drain current and therefore modulate the voltage across the drain-source.

The SI2328DS-T1-GE3 is a powerful and versatile MOSFET and is used in a variety of applications. Its low power dissipation, low input capacitance and low gate charge allow it to be used in a wide range of power management, switching, sensing and linear amplification applications. The high transconductance effect of the SI2328DS-T1-GE3 also makes it a good choice for applications that require accurate power control.

The specific data is subject to PDF, and the above content is for reference