Allicdata Part #: | SI2392DS-T1-GE3TR-ND |
Manufacturer Part#: |
SI2392DS-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 3.1A SOT-23 |
More Detail: | N-Channel 100V 3.1A (Tc) 1.25W (Ta), 2.5W (Tc) Sur... |
DataSheet: | SI2392DS-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta), 2.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 196pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10.4nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 126 mOhm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI2392DS-T1-GE3 is a single N-Channel Enhancement Mode MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Vishay.
The multi-level FET (MFET) technology used in the SI2392DS-T1-GE3 provides improved performance compared to traditional MOSFETs.
The SI2392DS-T1-GE3 offers high current switching capability with low on resistance and low gate charge.
Features include ultra-low input capacitance, low input and output leakage current, temperature-compensated threshold voltage, low gate-source breakdown voltage, and fast neural network charging.
The SI2392DS-T1-GE3 has multiple applications, including battery-operated and mobile devices, portable medical, automotive lighting, and industrial motor control/lighting. It is also suitable for a variety of power supplies, motor control systems, and switched-mode power supplies.
Working Principle
The SI2392DS-T1-GE3 operates by using a gate voltage to control the current flowing between the drain and source.
When a positive gate voltage is applied to the device, electrons are attracted from the channel that separates the drain and source, which then enhances the conductivity of the channel.
A negative voltage applied to the gate attracts positive ions from the drain and/or source terminal, thus depleting the channel and creating a resistive barrier that prevents current flow.
The SI2392DS-T1-GE3 is a MOSFET, meaning that it has the ability to switch on and off the current flow in the device by controlling the gate voltage.
The SI2392DS-T1-GE3 is ideally suited for switching applications as its features enable it to turn off quickly and completely, resulting in low power consumption.
Conclusion
The SI2392DS-T1-GE3 is a single N-Channel Enhancement Mode MOSFET with a variety of applications in battery-operated and mobile devices, portable medical, automotive lighting, and industrial motor control/lighting.
Its features, such as ultra-low input capacitance, low on resistance and low gate charge, as well as fast neural network charging, enable it to be used in a variety of switching applications that require fast current switching and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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