SI2392DS-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI2392DS-T1-GE3TR-ND

Manufacturer Part#:

SI2392DS-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 3.1A SOT-23
More Detail: N-Channel 100V 3.1A (Tc) 1.25W (Ta), 2.5W (Tc) Sur...
DataSheet: SI2392DS-T1-GE3 datasheetSI2392DS-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 126 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI2392DS-T1-GE3 is a single N-Channel Enhancement Mode MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Vishay.

The multi-level FET (MFET) technology used in the SI2392DS-T1-GE3 provides improved performance compared to traditional MOSFETs.

The SI2392DS-T1-GE3 offers high current switching capability with low on resistance and low gate charge.

Features include ultra-low input capacitance, low input and output leakage current, temperature-compensated threshold voltage, low gate-source breakdown voltage, and fast neural network charging.

The SI2392DS-T1-GE3 has multiple applications, including battery-operated and mobile devices, portable medical, automotive lighting, and industrial motor control/lighting. It is also suitable for a variety of power supplies, motor control systems, and switched-mode power supplies.

Working Principle

The SI2392DS-T1-GE3 operates by using a gate voltage to control the current flowing between the drain and source.

When a positive gate voltage is applied to the device, electrons are attracted from the channel that separates the drain and source, which then enhances the conductivity of the channel.

A negative voltage applied to the gate attracts positive ions from the drain and/or source terminal, thus depleting the channel and creating a resistive barrier that prevents current flow.

The SI2392DS-T1-GE3 is a MOSFET, meaning that it has the ability to switch on and off the current flow in the device by controlling the gate voltage.

The SI2392DS-T1-GE3 is ideally suited for switching applications as its features enable it to turn off quickly and completely, resulting in low power consumption.

Conclusion

The SI2392DS-T1-GE3 is a single N-Channel Enhancement Mode MOSFET with a variety of applications in battery-operated and mobile devices, portable medical, automotive lighting, and industrial motor control/lighting.

Its features, such as ultra-low input capacitance, low on resistance and low gate charge, as well as fast neural network charging, enable it to be used in a variety of switching applications that require fast current switching and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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