SI2302CDS-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI2302CDS-T1-GE3TR-ND

Manufacturer Part#:

SI2302CDS-T1-GE3

Price: $ 0.58
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 2.6A SOT23-3
More Detail: N-Channel 20V 2.6A (Ta) 710mW (Ta) Surface Mount S...
DataSheet: SI2302CDS-T1-GE3 datasheetSI2302CDS-T1-GE3 Datasheet/PDF
Quantity: 48000
1 +: $ 0.58000
10 +: $ 0.56260
100 +: $ 0.55100
1000 +: $ 0.53940
10000 +: $ 0.52200
Stock 48000Can Ship Immediately
$ 0.58
Specifications
Vgs(th) (Max) @ Id: 850mV @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 710mW (Ta)
FET Feature: --
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 57 mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI2302CDS-T1-GE3 is a N-channel enhancement mode low voltage MOSFET ( Metal Oxide Semiconductor Field Effect Transistor ) designed for general purpose flat-panel applications. It has excellent high speed switching characteristics, due to its low total gate charge, low input capacitance, and low on-resistance. This device is offered in a surface-mounted PowerPAK SO-8 package with exposed thermal pad, making it ideal for space constrained designs. The high temperature operating range of this device also makes it suitable for automotive applications.

The SI2302CDS-T1-GE3 works by constructing a channel between its source and drain terminals, when an electric field is applied to its Gate terminal. The electric field generated on the gate terminal controls the conductive properties of the channel, allowing current to flow through it. The Gate controls the flow of current, allowing the MOSFET to act as an amplifier or a switch for controlling the voltage applied to its terminals.

The SI2302CDS-T1-GE3 is typically used as a switching element in flat panel displays. It is often used in power converter circuits, high speed data converters and other high speed switching applications. It can also be used in high power applications like High Voltage DC-DC power converters, Chopper circuits, and Class-D amplifiers. The low on-resistance and low total gate charge of this MOSFET make it suitable for high frequency switching applications.

The SI2302CDS-T1-GE3 is available in both standard and automotive versions, allowing it to be used in a wide variety of applications. It is designed to handle loads up to 30A and voltages of 30V. It is also designed to work over a wide temperature range of -55° to +175°C, making it suitable for automotive applications. With its low voltage and low current operation, the SI2302CDS-T1-GE3 is the perfect solution for flat-panel applications requiring low power consumption and high efficiency.

In conclusion, the SI2302CDS-T1-GE3 is an enhancement mode N-channel MOSFET designed for general purpose flat panel applications. It has excellent high speed switching characteristics, and is available in automotive versions making it suitable for a number of applications. It has a low input capacitance and low total gate charge, and can handle loads of up to 30A and voltages of 30V. The low voltage and low current operation make it the perfect solution for flat-panel applications requiring low power consumption and high efficiency.

The specific data is subject to PDF, and the above content is for reference

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