SI2365EDS-T1-GE3

The SI2365EDS-T1-GE3 is a N-channel, enhancement-mode power MOSFET produced with the Advanced PowerMOS™ process, which combines advanced cell design and improved manufacturing technologies to deliver high speed switching performance and low on-resistance. This MOSFET is ideal for use in converters, power switching and other power supply applications.

Application Fields

SI2365EDS-T1-GE3 are ideal for applications involving converters, power switching, general-purpose power supply and other AC/DC applications requiring small power supplies. With both a low on-resistance and an efficient switching speed, these MOSFETs are designed to minimize loss in order to achieve maximum power conversion efficiency.

SI2365EDS-T1-GE3 are also well-suited for use as switches for high frequency switching, power and signal line switching, and waveform shaping applications. The low on-resistance and efficient switching also provide enhanced noise immunity and low electromagnetic interference. In addition, the MOSFETs are compatible with a wide range of packages, enabling integration with a number of systems.

Working Principle

The SI2365EDS-T1-GE3 is an N-channel MOSFET, meaning that it is made up of two terminals: a source and a drain. When an external bias voltage is applied to the gate, it creates an electric field that attracts gate electrons, allowing the current to flow between the source and the drain. In this device, the gate voltage is used to control the drain-source resistance and the current flow.

The gate voltage is controlled by the applied bias voltage. At lower gate voltages, the MOSFET is in its off or blocking state, and no current flows between the source and the drain. At higher gate voltages, the MOSFET is in the on-state, and current flows freely between the source and the drain.

The current is limited by the bias voltage, as higher gate voltage will eventually saturate the source-drain resistance. This MOSFET has a maximum drain-source voltage of 100V and a maximum drain current of 3A at 25C. The on-resistance is between 4.2 and 5.6mΩ depending on the gate voltage.

Conclusion

The SI2365EDS-T1-GE3 is an N-channel, enhancement-mode power MOSFET designed to provide efficient switching and low on-resistance. It is ideal for use in converters, power switching, general-purpose power supply and other AC/DC applications requiring small power supplies. The device has a maximum drain-source voltage of 100V and a maximum drain current of 3A at 25C, with an on-resistance ranging from 4.2 to 5.6mΩ depending on the gate voltage.