SI2321-TP Allicdata Electronics
Allicdata Part #:

SI2321-TPMSTR-ND

Manufacturer Part#:

SI2321-TP

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: P-CHANNEL MOSFET, SOT-23 PACKAGE
More Detail: P-Channel 20V 2.9A (Ta) 350mW (Ta) Surface Mount S...
DataSheet: SI2321-TP datasheetSI2321-TP Datasheet/PDF
Quantity: 3000
3000 +: $ 0.05506
Stock 3000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 900mV @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI2321-TP is a N-channel MOSFET, belonging to the family of surface-mount transistors. It is typically used in power switching, motor control and switching circuits, especially in digital power control and pulse-width modulation (PWM) applications. Because of its low on resistance, low output capacitance and low gate drive, the SI2321-TP provides excellent efficiency in a wide range of electronic components.

MOSFETs are typically used in power switching applications where both on and off switching of a device is required. This type of semiconductor is referred to as a ‘field effect transistor’ because it relies on the electrical field created between the gate and the source and drain leads to determine the flow of current. In the SI2321-TP, the gate is insulated from the source and drain leads by a thin layer of material (typically SiO2). The MOSFET is then able to effectively control the current flow between the source and drain by modulating the size of this electrical field.

The SI2321-TP operates on the principle of minority carrier injection, meaning that as the electrical field is adjusted, electrons within the source are injected into the channel region for conduction. This allows for greater control over the current flow, as the electrical field can be increased or decreased to modulate the flow. As the gate voltage is increased, more electrons are injected, leading to a larger current flow, while a decrease in voltage leads to the opposite.

The SI2321-TP is designed in a small surface-mount package, making it easy to accommodate into a wide range of designs. The device also has a low gate drive voltage, meaning that it can be operated with a relatively low voltage input. This makes the SI2321-TP a great choice for applications requiring a small, efficient MOSFET.

Overall, the SI2321-TP is a great choice for a wide range of power switching, motor control and switching circuits. Its low on resistance, low output capacitance and low gate drive make it a great choice for digital power control and pulse-width modulation applications. With its small surface-mount package and low gate-drive voltage, the SI2321-TP is an efficient and reliable choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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