| Allicdata Part #: | SI2302ADS-T1-E3TR-ND |
| Manufacturer Part#: |
SI2302ADS-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 20V 2.1A SOT23-3 |
| More Detail: | N-Channel 20V 2.1A (Ta) 700mW (Ta) Surface Mount S... |
| DataSheet: |  SI2302ADS-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 1.2V @ 50µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 700mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 3.6A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 2.1A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The SI2302ADS-T1-E3 is a single P-channel MOSFET that offers low on-resistance, high efficiency, and ruggedness. It is typically used in applications such as power management and audio power amplifiers. Its unique design also makes it ideal for precision signal processing, low-power, and high-current monitoring.
The major components of the SI2302ADS-T1-E3 are the source, gate, and drain terminals. The source is typically used to supply the input voltage. The gate is used to control the current flow from the source to the drain. The drain is connected to a load, such as a resistor or capacitor, and is used to carry the output of the MOSFET. When a gate voltage is applied to the transistor, the source is connected to the drain, allowing current to flow from the source to the drain.
The two main features that make the SI2302ADS-T1-E3 so versatile are its low on-resistance and high voltage breakdown voltage. The on-resistance of the device is extremely low when compared to other single-channel MOSFETs, which makes the SI2302ADS-T1-E3 ideal for precision signal processing. The voltage breakdown voltage is also high, which allows the device to be used in a wide range of applications. Additionally, the SI2302ADS-T1-E3 has a low gate capacitance, which makes it suitable for high-frequency applications.
The SI2302ADS-T1-E3 is also able to operate at very high temperatures, making it ideal for applications such as automotive, military, and industrial power management, as well as for audio power amplifiers. The device can also handle very high currents, which makes it suitable for applications such as power management and motor control.
Overall, the SI2302ADS-T1-E3 is an ideal choice for applications that require low on-resistance, high efficiency, ruggedness, and high-temperature performance. It is suitable for a wide range of applications, including precision signal processing, low-power and high-current monitoring, and motor control.
The specific data is subject to PDF, and the above content is for reference
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