SI2335DS-T1-E3

The SI2335DS-T1-E3 is a single, low side N-channel enhancement mode power MOSFET from Silergy Corporation. This power MOSFET is mainly used for very low resistance switching circuit, laser diode drive circuit, power converter and other similar applications. It is an ideal choice for battery powered applications like notebook computers, mobile phones and portable radio when used with proper P-Channel. We are going to discuss the application field and working principle of this power MOSFET.

The SI2335DS-T1-E3 is mainly applied in notebook computers, mobile phones and other battery powered portable electronic devices. The classic feature of this power MOSFET is its ultra-low resistance which can reduce the power dissipation significantly and keep the temperature of the system low, so it is a energy saving product. Besides, it is also featured with full avalanche and extremely low gate charge, which makes it suitable for switching system where fast switching speed is required. The SI2335DS-T1-E3 is also can be used in power converter, audio power amplifier and other applications that needs low side N-channel enhancement mode.

The working principle of the SI2335DS-T1-E3 is based on the electric field effect technology. The electric field effect means that the current can be modulated by the electric field generated by the applied gate voltage. The main component of this power MOSFET is a PN junction formed by a source, a gate and a drain. When the gate voltage is applied, a capacitive depletion region is formed between the PN junction, and this depletion region is critical to the working of this power MOSFET.

The working of the SI2335DS-T1-E3 can be mainly divided into three parts: turn on, turn off and stable condition. When the gate voltage is applied, the depletion zone beneath the gate will extend and pinch off the PN junction. This will modulate the electric field, increase the potential barrier and reduce the drain current. As the current flowing through the electric field is reduced, the power consumption of this power MOSFET is reduced. When the gate voltage is removed, the electric field will be restored and the drain current will increase and the turn off process of this power MOSFET is completed. In the stable condition, the current flowing through the electric field is regulated by the electric field, which is the main feature of this power MOSFET.

The SI2335DS-T1-E3 is mainly used for very low resistance switching circuit, laser diode drive circuit, power converter, audio power amplifier and other similar applications. It is featured with ultra-low resistance, full avalanche, low gate charge, low power dissipation and compact packaging. Thanks to its excellent features, this single, low side N-Channel enhancement mode power MOSFET can help save energy in battery powered portable electronic devices, which makes it an ideal choice for many portable applicances.