SI2304-TP Allicdata Electronics
Allicdata Part #:

SI2304-TPMSTR-ND

Manufacturer Part#:

SI2304-TP

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: N-CHANNEL MOSFET, SOT-23 PACKAGE
More Detail: N-Channel 30V 2.5A (Ta) 250mW (Ta) Surface Mount S...
DataSheet: SI2304-TP datasheetSI2304-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05506
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI2304-TP is a power MOSFET device specifically designed to provide high-speed switching capability with low on-resistance. This device provides fast switching performance and low on resistance over a wide range of drain-to-source voltage and gate voltage. It is an effective solution for high-speed switching applications such as high-voltage motor control and high-speed switching power regulators.

A MOSFET (metal oxide semiconductor field-effect transistor) is a specialized type of transistor that is designed to be operated using a voltage applied to the gate terminal. It is a type of field-effect transistor (FET), which means that the electrical characteristics of the device are determined by the potential difference between the gate and the source terminals. The SI2304-TP is a n-channel power MOSFET device with a single die configuration (also known as a "single-die device").

The structural configuration of the SI2304-TP device allows it to provide excellent switching performance and low on-resistance. The device is constructed with a single die configuration, which allows the device to have a very low on-resistance, as well as a low gate-to-drain capacitance. This is due to the reduced area of the device, and the increased surface area that comes with a single die configuration.

The SI2304-TP is designed to operate with a drain-to-source voltage (VDS) of up to 12V and a gate voltage (VGS) of up to 8V. When the gate voltage is applied, the current flows from the drain to the source, and the device acts as a switch. The device has a low input capacitance, which gives it a very fast switching time, allowing for high-speed switching applications. In addition, the device has a low on-resistance, which allows for low power loss.

The SI2304-TP also has excellent thermal performance. The device is designed to provide a high drain-source breakdown voltage, which ensures that the device can handle high voltages. This device also has a low thermal resistance, which helps to keep the device at a low operating temperature. As the device operates at low temperatures, it can help to improve the overall efficiency of the system.

The SI2304-TP is suitable for a wide range of applications, such as high-voltage motor control, high-speed switching power regulators, and other high-speed switching applications. The device has excellent characteristics, such as fast switching time and low on-resistance, which make it a great choice for these types of applications. In addition, the device has a low input capacitance, which helps to reduce the power loss, and it has an excellent thermal performance.

In conclusion, the SI2304-TP is a power MOSFET device specifically designed to provide high-speed switching capability with low on-resistance. The single-die configuration and the device’s excellent characteristics make it a great choice for a wide range of applications, such as high-voltage motor control, high-speed switching power regulators, and other high-speed switching applications. The device has a low input capacitance, and it has an excellent thermal performance, which helps to reduce the overall power loss.

The specific data is subject to PDF, and the above content is for reference

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