
Allicdata Part #: | SI2304-TPMSTR-ND |
Manufacturer Part#: |
SI2304-TP |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | N-CHANNEL MOSFET, SOT-23 PACKAGE |
More Detail: | N-Channel 30V 2.5A (Ta) 250mW (Ta) Surface Mount S... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.05506 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 250mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 240pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 2.2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI2304-TP is a power MOSFET device specifically designed to provide high-speed switching capability with low on-resistance. This device provides fast switching performance and low on resistance over a wide range of drain-to-source voltage and gate voltage. It is an effective solution for high-speed switching applications such as high-voltage motor control and high-speed switching power regulators.
A MOSFET (metal oxide semiconductor field-effect transistor) is a specialized type of transistor that is designed to be operated using a voltage applied to the gate terminal. It is a type of field-effect transistor (FET), which means that the electrical characteristics of the device are determined by the potential difference between the gate and the source terminals. The SI2304-TP is a n-channel power MOSFET device with a single die configuration (also known as a "single-die device").
The structural configuration of the SI2304-TP device allows it to provide excellent switching performance and low on-resistance. The device is constructed with a single die configuration, which allows the device to have a very low on-resistance, as well as a low gate-to-drain capacitance. This is due to the reduced area of the device, and the increased surface area that comes with a single die configuration.
The SI2304-TP is designed to operate with a drain-to-source voltage (VDS) of up to 12V and a gate voltage (VGS) of up to 8V. When the gate voltage is applied, the current flows from the drain to the source, and the device acts as a switch. The device has a low input capacitance, which gives it a very fast switching time, allowing for high-speed switching applications. In addition, the device has a low on-resistance, which allows for low power loss.
The SI2304-TP also has excellent thermal performance. The device is designed to provide a high drain-source breakdown voltage, which ensures that the device can handle high voltages. This device also has a low thermal resistance, which helps to keep the device at a low operating temperature. As the device operates at low temperatures, it can help to improve the overall efficiency of the system.
The SI2304-TP is suitable for a wide range of applications, such as high-voltage motor control, high-speed switching power regulators, and other high-speed switching applications. The device has excellent characteristics, such as fast switching time and low on-resistance, which make it a great choice for these types of applications. In addition, the device has a low input capacitance, which helps to reduce the power loss, and it has an excellent thermal performance.
In conclusion, the SI2304-TP is a power MOSFET device specifically designed to provide high-speed switching capability with low on-resistance. The single-die configuration and the device’s excellent characteristics make it a great choice for a wide range of applications, such as high-voltage motor control, high-speed switching power regulators, and other high-speed switching applications. The device has a low input capacitance, and it has an excellent thermal performance, which helps to reduce the overall power loss.
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