Allicdata Part #: | SI4100DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4100DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 6.8A 8-SOIC |
More Detail: | N-Channel 100V 6.8A (Tc) 2.5W (Ta), 6W (Tc) Surfac... |
DataSheet: | SI4100DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 63 mOhm @ 4.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI4100DY-T1-GE3 is a type of transistor, more specifically known as a Field-effect transistor (FET). This type of transistor works using the electrical properties of a semiconductor material and can be used in many different components and applications. Because FETs are low-power devices, they can typically operate more efficiently than other types of transistors, making them an ideal choice for certain types of applications.
The SI4100DY-T1-GE3 is a single-polarity FET, meaning it has only one source, three drains and one gate. This transistor has been designed specifically to be used in power management applications, such as switching power supplies, inverters and battery chargers. This type of transistor is also useful in high-speed switching, as it has excellent switching characteristics and can handle a wide range of voltages.
This transistor works by having an electric field applied to the gate of the transistor, which then controls the current passing through the source and drain terminals. This current changes depending on the potential difference between the gate and the source and drain, which is what allows the transistor to act as an amplifier or switch. This is why the SI4100DY-T1-GE3 is often used for high-speed switching applications.
This transistor can handle up to 40 volts, making it suitable for a wide variety of applications. It also has a low ON voltage and low gate-source capacitance, which makes it ideal for use in small circuit boards, saving space and power. Additionally, this transistor is extremely reliable and has a high temperature rating of 150°C.
The SI4100DY-T1-GE3 can be used in a variety of applications, including those requiring switching power supplies and inverters, as well as for amplifying signals in a variety of circuits. It can also be used in motor control applications, such as motor speed control and speed regulation, since it can handle large voltages and currents and maintain a stable output. Additionally, this transistor can be used as a voltage regulator, allowing it to maintain a constant voltage output even when the input voltage changes.
The SI4100DY-T1-GE3 is an incredibly versatile device, making it a great choice for many types of applications. Its ability to handle high voltages and maintain a stable output makes it suitable for power management applications, while its low power consumption and high temperature rating make it an excellent choice for high-power applications. Additionally, its low ON voltage and gate-source capacitance make it a great choice for small circuit boards, offering much-needed space and power savings. With its combinations of attributes, the SI4100DY-T1-GE3 provides an ideal solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI4123-D-GM | Silicon Labs | 4.0 $ | 543 | IC SYNTHESIZER RF1/IF 28Q... |
SI4112-D-GMR | Silicon Labs | 2.48 $ | 1000 | IC SYNTHESIZER IF ONLY 28... |
SI4133-D-GM | Silicon Labs | 4.98 $ | 664 | IC SYNTHESIZER RF DUALBAN... |
SI4112-D-GM | Silicon Labs | -- | 1050 | IC SYNTHESIZER IF ONLY 28... |
SI4133-D-GT | Silicon Labs | -- | 3230 | IC SYNTHESIZR RF1/RF2/IF ... |
SI4136-F-GM | Silicon Labs | -- | 414 | IC SYNTHESIZER RF1/RF2/IF... |
SI4113-D-GT | Silicon Labs | 3.85 $ | 62 | IC SYNTHESIZER RF1/RF2 24... |
SI4112-D-GT | Silicon Labs | -- | 496 | IC SYNTHESIZER IF ONLY 24... |
SI4108DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 75V 20.5A 8-S... |
SI4110DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 80V 17.3A 8-S... |
SI4170DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 30A 8-SOI... |
SI4100DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 6.8A 8-S... |
SI4158DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 36.5A 8-S... |
SI4104DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 4.6A 8-S... |
SI4190DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 20A 8-SO... |
SI4102DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 3.8A 8-S... |
SI4104DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 4.6A 8-S... |
SI4176DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A 8-SOI... |
SI4196DY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 8A 8SOICN... |
SI4128BDY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V |
SI4103DY-T1-GE3 | Vishay Silic... | 0.22 $ | 1000 | MOSFET P-CHAN 30V SO-8P-C... |
SI4168DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 24A 8-SOI... |
SI4100DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 6.8A 8-S... |
SI4154DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 36A 8-SOI... |
SI4190ADY-T1-GE3 | Vishay Silic... | -- | 2500 | MOSFET N-CH 100V 18.4A 8S... |
SI4126DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 39A 8-SOI... |
SI4166DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 30.5A 8-S... |
SI4164DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 30A 8-SOI... |
SI4124DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 20.5A 8-S... |
SI4160DY-T1-GE3 | Vishay Silic... | -- | 2500 | MOSFET N-CH 30V 25.4A 8-S... |
SI4114DY-T1-E3 | Vishay Silic... | -- | 2500 | MOSFET N-CH 20V 20A 8-SOI... |
SI4134DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 14A 8-SOI... |
SI4102DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 3.8A 8-S... |
SI4134DY-T1-E3 | Vishay Silic... | -- | 2500 | MOSFET N-CH 30V 14A 8-SOI... |
SI4112-BM | Silicon Labs | 0.0 $ | 1000 | IC SYNTHESIZER IF-ONLY 28... |
SI4123-BM | Silicon Labs | -- | 1000 | IC SYNTH RF1/IF SNGL-BAND... |
SI4126-BM | Silicon Labs | -- | 1000 | IC SYNTHESIZER WLAN RF2/I... |
SI4136-BM | Silicon Labs | 0.0 $ | 1000 | IC SYNTH WLAN SAT/RADIO 2... |
SI4114G-BM | Silicon Labs | 0.0 $ | 1000 | IC RF FREQ SYNTH VCO 28QF... |
SI4115G-BM | Silicon Labs | 0.0 $ | 1000 | FREQUENCY GSM/GPRS SYNTH ... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...