SI4346DY-T1-GE3

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.31W (Ta)
FET Feature:	--
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	10nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	23 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	5.9A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SI4346DY-T1-GE3, part of the Vishay Siliconix portfolio, is a high-voltage, low-side, N-channel enhancement mode power MOSFET (EOOP-FET) with a rated drain-source breakdown voltage of 700V. Designed on Vishay\'s TO-252 (D-PaK), the device has a low on-resistance of 7Ohm and an operating temperature range of -55°C to +150°C. Because of its robust package outline, the SI4346DY-T1-GE3 is versatile, making it suitable for a variety of applications ranging from automotive to consumer electronics. This article provides an overview of the application field and working principle of the SI4346DY-T1-GE3.The SI4346DY-T1-GE3 can be used in a variety of applications including DC motor control, power supply circuits, switching regulators and AC adapters. The device features industry-leading low on-resistance and a wide gate voltage range that makes it ideal for high-power switching applications. It is a convenient choice when designing a power supply controller that requires a fast switching response. The wide drain-source voltage range of up to 700V makes the SI4346DY-T1-GE3 a great choice for applications that require a high-voltage on-state current conduction capability.The SI4346DY-T1-GE3 is a P-channel enhancement mode power MOSFET with an enhancement mode off-state or "cut-off" voltage of 7V. This means that the device can turn off the drain current just by applying a gate drive voltage lower than 7V. The device is designed to offer high-performance switching for applications that require a high-voltage capability. The SI4346DY-T1-GE3 is designed to offer fast switching performance with a low on-resistance of 7Ohms. The device has a wide drain-source voltage range of up to 700V, a maximum drain current of 6A and an RDS(on) of just 7Ohms. This provides good thermal performance and makes the device suitable for a range of applications.The SI4346DY-T1-GE3’s versatile package makes it easy to incorporate into a wide range of designs. The TO-252 package ensures that the device is robust and reliable, even in harsh environments. The device features a built-in diode that protects against reverse currents, making it compatible with a range of applications where reverse current protection is required. To summarize, the SI4346DY-T1-GE3 is a high-voltage, low-side, N-channel enhancement mode power MOSFET designed for a variety of applications ranging from automotive to consumer electronics. It offers a fast switching response, low on-resistance, wide gate voltage range and high-voltage on-state current conduction capability. Its versatile package and built-in diode makes the device reliable and suitable for a range of applications where reverse current protection is required.

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