Allicdata Part #: | SI4410DYPBF-ND |
Manufacturer Part#: |
SI4410DYPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 10A 8-SOIC |
More Detail: | N-Channel 30V 10A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | SI4410DYPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 13.5 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1585pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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When it comes to semiconductor components, there are a number of different types. One such type is the field effect transistor (FET). The SI4410DYPBF is an example of this type of component, and it is used in a range of applications. In this article, we will take a look at the application field and working principle of the SI4410DYPBF.
The SI4410DYPBF is a type of n-channel enhancement-mode power field effect transistor (FET). It is a single, low voltage device that has been designed for use in a number of applications. These include being used in power switches, modulator/demodulator (MODEM) applications, audio amplifier circuits, and various DC-DC converters.
The working principle of the SI4410DYPBF is fairly simple. The component is active when the voltage applied to its gate exceeds the threshold voltage, which causes electrons to flow through the component. This creates a “channel” of current between the source and drain. This channel is controlled by the current flowing through the gate, which allows the component to act as a switch.
The component also has a number of other features that make it useful in a range of applications. The component has a low-threshold voltage of just -1.2V, which means that it can be used in applications where low-voltage operation is required. It also has built-in protection against gate-source and drain-source diodes for added protection. Finally, the component has an 8V maximum operating voltage, which makes it well suited for use in medium-voltage applications.
The SI4410DYPBF is well suited for use in a range of DC-DC converters, as it is able to handle both current and voltage conversion while also providing built-in overvoltage protection. The component is also capable of providing circuit protection in low voltage power switching applications such as LED lighting circuits and even automotive lighting systems. In addition, the component is also useful in applications such as audio amplifier circuits and various modulator/demodulator (MODEM) applications.
Overall, the SI4410DYPBF is a useful single n-channel power field effect transistor (FET) device that is used in a range of applications. Its low-threshold voltage, built-in protection features, and 8V maximum operating voltage make it well suited for use in DC-DC converters and other low voltage power switching applications. As such, it is an important component for any electronics design requiring these features.
The specific data is subject to PDF, and the above content is for reference
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