SI4448DY-T1-GE3

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	1.7 mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	150nC @ 4.5V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	12350pF @ 6V
FET Feature:	--
Power Dissipation (Max):	3.5W (Ta), 7.8W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)

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Introduction

SI4448DY-T1-GE3 is a single N-channel MOSFET from Vishay Intertechnologies. It is a compact device with a total size of just 2mmx2mm and is based on their trench MOSFET technology. It is normally used for low power applications due to its high efficiency operation and low on-state resistance.

Application Field

The high efficiency and low power consumption of the SI4448DY-T1-GE3 makes it ideal for several types of applications. For example, it can be used in high-performance analog and mixed-signal systems, automotive, audio and power applications. It can be used in power management circuits and power converters as well.In terms of automotive applications, the SI4448DY-T1-GE3 can be used in voltage regulators, engine control, traction control, and automated driving assistance systems. It can also be used in solar inverters and controllers.In audio applications, the SI4448DY-T1-GE3 can be used in audio amplifiers, heads-up-displays, and mobile audio devices. In power applications, the device can be used in bi-directional switches, DCDC converters, and switched-mode power supplies.

Working Principle

The SI4448DY-T1-GE3 is a MOSFET and thus it operates on the principle of surface electric field effect. It consists of a gate, a source and a drain separated by a thin layer of semiconductor material.When a voltage is applied to the gate, it attracts electrons from the surface of the semiconductor material and alters the electric field. This creates a conductive channel between the source and drain and thus allows current to flow between them.The on-state resistance of the SI4448DY-T1-GE3 is low, thus making it more efficient in terms of power consumption. The device also has a low input capacitance and switching time, which helps in keeping the power consumption low.

Conclusion

The SI4448DY-T1-GE3 is a single N-channel MOSFET from Vishay Intertechnologies with a total size of just 2mmx2mm. It is based on their trench MOSFET technology and is an excellent choice for high-performance analog and mixed-signal systems and for low power applications. It can be used in automotive, audio and power applications with its high efficiency and low on-state resistance. The SI4448DY-T1-GE3 operates based on the principle of surface electric field effect and has a low input capacitance and switching time, which helps in keeping power consumption low.

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