SI4442DY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4442DY-T1-E3TR-ND

Manufacturer Part#:

SI4442DY-T1-E3

Price: $ 1.20
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 15A 8-SOIC
More Detail: N-Channel 30V 15A (Ta) 1.6W (Ta) Surface Mount 8-S...
DataSheet: SI4442DY-T1-E3 datasheetSI4442DY-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: $ 1.20000
10 +: $ 1.16400
100 +: $ 1.14000
1000 +: $ 1.11600
10000 +: $ 1.08000
Stock 1000Can Ship Immediately
$ 1.2
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SI4442DY-T1-E3 is a MOSFET transistor module from the SI4442DY series manufactured by Vishay. It is a 28V N-channel enhancement mode MOSFET, suitable for a wide range of load current applications in both analog & digital circuits. Mainly used for power supply management of circuits, SI4442DY-T1-E3 aids in providing perfect voltage for consumer electronics products. It consumes very low power in stand-by mode, making it energy efficient.

The SI4442Dy-T1-E3 is a laterally diffused metal oxide silicon field effect transistor that works on the principle of enhancement mode FET or diode. When applied with the appropriate bias voltage to its gate terminal, the channel between source and drain and inside the channel, a potential barrier is formed which behaves like a semiconductor diode. In addition, two vertical layers of gate material are employed to produce the desired electrostatic field, which controls the behavior of the FET.

The two vertical layers of gate material employed in SI4442DY-T1-E3 are the starting materiel of the FET, which are called the top and the bottom gates. These two gates, integrated together, act as an effective insulation layer to protect the transistor from high voltage and current fluctuations. The effective insulation layer also maintains the uniformity of the device’s functioning under different load conditions. As a result, SI4442DY-T1-E3 is a reliable device for uses such as improved motor control, computer design and power supply management.

Because of its adjustable working temperature range and a high dielectric breakdown voltage, SI4442DY-T1-E3 is suitable for use in high temperature and high voltage applications. The device also features an adjustable gate threshold voltage as well as a very low input capacitance, making it an efficient component for high frequency operations. Additionally, the unique body and gate insulated structure of the device allows its use in a wide range of applications where high noise immunity and extraordinary robust handling capabilities are required.

SI4442DY-T1-E3 is an optimal device for applications such as switching, regenerative, and current control, where low voltage and high current are involved. It is also suitable for applications needing long touch life, low thermal resistance and superior ESD performance. Due to its various advantages, SI4442DY-T1-E3 is used for boosting the performance of consumer electronics products and industrial automation devices.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SI44" Included word is 40
Part Number Manufacturer Price Quantity Description
SI4412ADY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 5.8A 8-SO...
SI4493DY-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 20V 10A 8SOIC...
SI4427BDY-T1-E3 Vishay Silic... -- 2500 MOSFET P-CH 30V 9.7A 8-SO...
SI4463-915-DK Silicon Labs 572.97 $ 1000 KIT DEV WIRELESS SI4463 9...
SI4483ADY-T1-GE3 Vishay Silic... -- 5000 MOSFET P-CH 30V 19.2A 8-S...
SI4401BDY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 40V 8.7A 8-SO...
SI4409DY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 150V 1.3A 8-S...
SI4466DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 20V 9.5A 8-SO...
SI4421DY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 10A 8-SOI...
SI4456DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 40V 33A 8-SOI...
SI4410BDY-T1-E3 Vishay Silic... -- 5000 MOSFET N-CH 30V 7.5A 8-SO...
SI4446DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 40V 3.9A 8-SO...
SI4431-A0-FM Silicon Labs 0.0 $ 1000 IC RF TXRX ISM ...
SI4406DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 13A 8-SOI...
SI4430-A0-FM Silicon Labs -- 1000 IC RF TXRX ISM ...
SI4431-B1-FM Silicon Labs -- 467 IC RF TXRX ISM ...
SI4430BDY-T1-GE3 Vishay Silic... 0.55 $ 1000 MOSFET N-CH 30V 14A 8-SOI...
SI4420-D1-FTR Silicon Labs 2.39 $ 1000 IC RF TXRX ISM ...
SI4425BDY-T1-E3 Vishay Silic... -- 22500 MOSFET P-CH 30V 8.8A 8-SO...
SI440MC2 Belden Inc. 19.27 $ 1000 SPLICE AUTO SEIZE
SI4451DY-T1-GE3 Vishay Silic... 1.0 $ 1000 MOSFET P-CH 12V 10A 8-SOI...
SI4484EY-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 4.8A 8-S...
SI4485DY-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 30V 6A 8-SOIC...
SI4430-B1-FMR Silicon Labs -- 1000 IC RF TXRX ISM ...
SI4465ADY-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 8V 8SOICP-Cha...
SI4480DY-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 80V 6A 8-SOIC...
SI4490DY-T1-GE3 Vishay Silic... -- 2500 MOSFET N-CH 200V 2.85A 8-...
SI4462DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 200V 1.15A 8-...
SI4446DY-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 40V 3.9A 8-SO...
SI4468-A2A-IMR Silicon Labs 1.75 $ 1000 IC RF TXRX+MCU 802.15.4 2...
SI4470EY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 60V 9A 8-SOIC...
SI4420BDY-T1-E3 Vishay Silic... -- 7500 MOSFET N-CH 30V 9.5A 8-SO...
SI4461-B0B-FM Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI4404DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 15A 8-SOI...
SI4435DYPBF Infineon Tec... 0.0 $ 1000 MOSFET P-CH 30V 8A 8-SOIC...
SI4430-B1-FM Silicon Labs -- 27 IC RF TXRX ISM ...
SI4438-C2A-GMR Silicon Labs -- 1000 IC RF TXRX+MCU ISM ...
SI4463-C2A-GMR Silicon Labs -- 1000 IC RF TXRX+MCU ISM ...
SI4464-B1B-FM Silicon Labs -- 1000 IC RF TXRX+MCU ISM ...
SI4456DY-T1-E3 Vishay Silic... 0.85 $ 2500 MOSFET N-CH 40V 33A 8-SOI...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics