Allicdata Part #: | SI4410DY-ND |
Manufacturer Part#: |
SI4410DY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 10A 8-SOIC |
More Detail: | N-Channel 30V 10A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | SI4410DY Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 13.5 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1585pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The SI4410DY is an N-channel enhancement-mode vertical DMOS FET (VDSM) transistor. It is designed to achieve superior switching performance from a single gate source. This transistor can be used in many applications, ranging from motor control, power management, system protection, and automotive applications. The SI4410DY has a drain-source breakdown voltage of 30V and a drain current rating of 6.8A. It is suitable for use in high voltage, high power switching applications.
The SI4410DY is an enhancement-mode transistor. It has a gate-to-source voltage higher than the threshold voltage and it requires an additional gate-source voltage to turn the transistor on. The threshold voltage of the SI4410DY is typically 4V, and the on-resistance is typically less than 2Ω in a drain-source configuration. This allows for low drain-source on-resistance, making it suitable for use in high power, high voltage applications.
The SI4410DY can be used in a wide range of applications. It can be used as a switching device for motor control, power management, and system protection. It can also be used in low power, high voltage applications such as automotive power supplies. It is also widely used for RF switching and power management applications. The SI4410DY can also be used in power amplifier circuits for radio communication, DC-DC converter circuits, and relay driver circuits.
The working principle of the SI4410DY is simple. It is a voltage-controlled device that is turned on when a certain voltage is applied to its gate-source connection. This voltage is known as the threshold voltage and must be greater than the supply voltage for the device to be turned on. When the voltage is applied to the gate-source connection, the channel between the drain and source is opened, allowing current to flow between them.
When the voltage applied to the gate-source connection is reduced, the current through the channel will decrease, and thus the device will be turned off. By controlling the voltage at the gate-source connection, the current through the channel can be varied. This makes the SI4410DY suitable for use in motor control, power management, and system protection applications, as well as in low power, high voltage applications.
In conclusion, the SI4410DY is a N-channel DMOS FET transistor, designed to provide superior switching performance, high drain-source breakdown voltage, and low on-resistance. It is suitable for use in many applications, ranging from motor control, power management, system protection, and automotive applications. It is also commonly used for RF switching and power management applications. The working principle of the SI4410DY is simple. It is a voltage-controlled device that is turned on when a certain voltage is applied to its gate-source connection, and it is turned off when the voltage is reduced.
The specific data is subject to PDF, and the above content is for reference
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