SI4455DY-T1-GE3 Discrete Semiconductor Products |
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| Allicdata Part #: | SI4455DY-T1-GE3TR-ND |
| Manufacturer Part#: |
SI4455DY-T1-GE3 |
| Price: | $ 0.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 150V 2A 8-SO |
| More Detail: | P-Channel 150V 2A (Ta) 3.1W (Ta), 5.9W (Tc) Surfac... |
| DataSheet: |  SI4455DY-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.33600 |
| 10 +: | $ 0.32592 |
| 100 +: | $ 0.31920 |
| 1000 +: | $ 0.31248 |
| 10000 +: | $ 0.30240 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 5.9W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1190pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 295 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SI4455DY-T1-GE3 MOSFET is a single discrete device designed to operate as a high frequency switch in commercial, consumer and automotive applications. The device features an optimized gate charge, low rDS(on) and thermal resistance, making it ideal for a wide range of power switching applications, including load switching, audio amplifiers, and portable device power control.The SI4455DY-T1-GE3 is a high-performance N-channel MOSFET transistor with dynamic gate performance. It is rated to handle currents from -74 Amps to -202 Amps and voltages up to 500V. It is typically used as a switch to control load or power circuits. The MOSFET technology offers improved switching with fast turn-on and turn-off times and low device losses, enabling designs with high-speed response and efficiency.The SI4455DY-T1-GE3 utilizes a dynamic gate performance technology that provides a fast turn-on speed, greatly reducing the switching delays associated with traditional power MOSFETs. This makes it an ideal choice for applications that require high speed response. The device features an optimized gate charge and low rDS(on) to minimize power loss and enhance efficiency at high switching frequency. Additionally, the device has a low thermal resistance, allowing it to dissipate heat quickly, increasing reliability in extreme operating conditions.The SI@455DY-T1-GE3 uses a typical MOSFET technology, however, the dynamic gate performance enables the device to switch quicker and more reliably than conventional power MOSFETs. This is possible because of the fast turn-on and turn-off times, which reduce switching delays and minimize losses associated with the switching process. Additionally, the low rDS(on) and optimized gate charge improves the efficiency of the switch.In conclusion, the SI4455DY-T1-GE3 is an ideal choice for a wide range of power switching applications, including load switching, audio amplifiers, and portable device power control. The device features an optimized gate charge, low rDS(on) and thermal resistance, making it ideal for high frequency switching with fast turn-on and turn-off times. Additionally, the device is rated to handle currents from -74 Amps to -202 Amps and voltages up to 500V.
The specific data is subject to PDF, and the above content is for reference
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