Allicdata Part #: | SI4435DDY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4435DDY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V 11.4A 8-SOIC |
More Detail: | P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surfac... |
DataSheet: | SI4435DDY-T1-GE3 Datasheet/PDF |
Quantity: | 5000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 9.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.4A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4435DDY-T1-GE3 is a well-known type of insulated gate bipolar transistor, commonly known as an IGBT. This particular type of transistor is well-suited for use in a wide variety of applications and is able to accept a variety of voltage ratings. This makes it an attractive choice for a range of applications from consumer electronics to telecoms.
An IGBT is a type of insulated gate bipolar transistor that uses both electron flow and hole flow to deliver power. This is achieved by utilizing three main elements: the main gate, the collector, and the emitter. By combining these three elements with a structure of two PN junctions, the IGBT can create a high efficient power switch that offers fast switching speeds, high current handling capabilities, and low on-state voltage losses.
The SI4435DDY-T1-GE3 IGBT is a single-channel device with a total gate-drain breakdown voltage of 1,700 V. This makes it an ideal choice for applications that require a high breakdown voltage, such as high-voltage switchgear or lighting controls. The device is also capable of handling high currents and offers an avalanche rating up to 150A. The on-state voltage drop of the SI4435DDY is remarkably low, ensuring superior energy efficiency.
This particular IGBT is also renowned for its high switching speeds, which can reach up to 17kHz. This makes it popular for motor control applications and switching supplies that require fast switching times. The device also features a wide operating temperature range of -55°C to +150°C and is capable of performing in high-temperature environments, making it ideal for use in a variety of industrial applications.
The SI4435DDY-T1-GE3 is well-suited for use in a variety of consumer electronics, telecoms, and industrial applications. Its high breakdown voltage, low on-state voltage drop, and high switching speeds make it an ideal choice for applications that require fast switching speeds and reliable power delivery. The device is also capable of handling high currents and is capable of operating in extreme conditions, making it suitable for a wide range of high-temperature, industrial applications.
The specific data is subject to PDF, and the above content is for reference
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