SI4435DDY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4435DDY-T1-GE3TR-ND

Manufacturer Part#:

SI4435DDY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 30V 11.4A 8-SOIC
More Detail: P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surfac...
DataSheet: SI4435DDY-T1-GE3 datasheetSI4435DDY-T1-GE3 Datasheet/PDF
Quantity: 5000
Stock 5000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 24 mOhm @ 9.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4435DDY-T1-GE3 is a well-known type of insulated gate bipolar transistor, commonly known as an IGBT. This particular type of transistor is well-suited for use in a wide variety of applications and is able to accept a variety of voltage ratings. This makes it an attractive choice for a range of applications from consumer electronics to telecoms.

An IGBT is a type of insulated gate bipolar transistor that uses both electron flow and hole flow to deliver power. This is achieved by utilizing three main elements: the main gate, the collector, and the emitter. By combining these three elements with a structure of two PN junctions, the IGBT can create a high efficient power switch that offers fast switching speeds, high current handling capabilities, and low on-state voltage losses.

The SI4435DDY-T1-GE3 IGBT is a single-channel device with a total gate-drain breakdown voltage of 1,700 V. This makes it an ideal choice for applications that require a high breakdown voltage, such as high-voltage switchgear or lighting controls. The device is also capable of handling high currents and offers an avalanche rating up to 150A. The on-state voltage drop of the SI4435DDY is remarkably low, ensuring superior energy efficiency.

This particular IGBT is also renowned for its high switching speeds, which can reach up to 17kHz. This makes it popular for motor control applications and switching supplies that require fast switching times. The device also features a wide operating temperature range of -55°C to +150°C and is capable of performing in high-temperature environments, making it ideal for use in a variety of industrial applications.

The SI4435DDY-T1-GE3 is well-suited for use in a variety of consumer electronics, telecoms, and industrial applications. Its high breakdown voltage, low on-state voltage drop, and high switching speeds make it an ideal choice for applications that require fast switching speeds and reliable power delivery. The device is also capable of handling high currents and is capable of operating in extreme conditions, making it suitable for a wide range of high-temperature, industrial applications.

The specific data is subject to PDF, and the above content is for reference

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